2022
DOI: 10.1007/s10853-022-07136-5
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Role of defects in the electronic properties of Al doped ZnO films deposited by spray pyrolysis

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Cited by 7 publications
(10 citation statements)
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“…44,45 The formation of oxygen vacancies and zinc interstitials shifted the Fermi level closer to the conduction band. 46 The barrier between AZO and CsPbBr 3 decreased, and the electrons on CsPbBr 3 were more easily transferred to the AZO film. Thus, the performance of the device was improved.…”
Section: Resultsmentioning
confidence: 99%
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“…44,45 The formation of oxygen vacancies and zinc interstitials shifted the Fermi level closer to the conduction band. 46 The barrier between AZO and CsPbBr 3 decreased, and the electrons on CsPbBr 3 were more easily transferred to the AZO film. Thus, the performance of the device was improved.…”
Section: Resultsmentioning
confidence: 99%
“…The shallow defects (zinc interstitials) as shallow donors contribute to the carrier concentration. 46 It was beneficial to improve the conductivity of the AZO film. Moreover, it could be found in Figure 9 that the 7% Al-doped ZnO PSC device had the lowest deep defects.…”
Section: Resultsmentioning
confidence: 99%
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“…Furthermore, it is well known that AZO film prepared using vacuum deposition techniques, such as sputtering, exhibit properties superior to those of solution processed films [ 28 ]. Especially, solution processed AZO films exhibit high electrical resistivity [ 66 ]. To tackle this issue, A. Kumar et al [ 66 ] suggested that vacuum/low pressure annealing is a viable route to enhance the electrical properties of solution processed AZO film.…”
Section: Aluminum and Co-doped Znomentioning
confidence: 99%
“…Especially, solution processed AZO films exhibit high electrical resistivity [ 66 ]. To tackle this issue, A. Kumar et al [ 66 ] suggested that vacuum/low pressure annealing is a viable route to enhance the electrical properties of solution processed AZO film. In this work, AZO films were fabricated using spray pyrolysis and after vacuum annealing, films showed an enhanced transparency of 82%, as well as low resistivity (2 × 10 −3 Ω cm) as compared to the as deposited films.…”
Section: Aluminum and Co-doped Znomentioning
confidence: 99%