Role of defect density in absorber layer of ternary chalcogenide Cu2SnS3 solar cell

Mathur, Arpit Swarup; Upadhyay, Sachin; Singh, Prem Pratap; Sharma, Bharti; Arora, Prateek; Rajput, Vikas Kumar; Kumar, Purushottam; Singh, D. P.; Singh, B. P.

doi:10.1016/j.optmat.2021.111314

Cited by 15 publications

(3 citation statements)

References 26 publications

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“…The constituting elements of ternary CTS are earth abundance and eco-friendly, making it suitable for sustainable and large-scale use. Researchers have investigated CTS polymorphs for a number of applications, such as optoelectronics [ 21 ], sensors [ 22 ], absorber layer of solar cell [ 23 ], and TE [ 24 ]. The complex crystallographic structure of CTS allows to synergistically tune the electronic and thermal transport properties, resulting in a high thermoelectric figure of merit.…”

Section: Introductionmentioning

confidence: 99%

Mechanochemical Synthesis of Sustainable Ternary and Quaternary Nanostructured Cu2SnS3, Cu2ZnSnS4, and Cu2ZnSnSe4 Chalcogenides for Thermoelectric Applications

et al. 2023

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Copper-based chalcogenides have emerged as promising thermoelectric materials due to their high thermoelectric performance, tunable transport properties, earth abundance and low toxicity. We have presented an overview of experimental results and first-principal calculations investigating the thermoelectric properties of various polymorphs of Cu2SnS3 (CTS), Cu2ZnSnS4 (CZTS), and Cu2ZnSnSe4 (CZTSe) synthesized by high-energy reactive mechanical alloying (ball milling). Of particular interest are the disordered polymorphs of these materials, which exhibit phonon-glass–electron-crystal behavior—a decoupling of electron and phonon transport properties. The interplay of cationic disorder and nanostructuring leads to ultra-low thermal conductivities while enhancing electronic transport. These beneficial transport properties are the consequence of a plethora of features, including trap states, anharmonicity, rattling, and conductive surface states, both topologically trivial and non-trivial. Based on experimental results and computational methods, this report aims to elucidate the details of the electronic and lattice transport properties, thereby confirming that the higher thermoelectric (TE) performance of disordered polymorphs is essentially due to their complex crystallographic structures. In addition, we have presented synchrotron X-ray diffraction (SR-XRD) measurements and ab initio molecular dynamics (AIMD) simulations of the root-mean-square displacement (RMSD) in these materials, confirming anharmonicity and bond inhomogeneity for disordered polymorphs.

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Section: Introductionmentioning

confidence: 99%

Mechanochemical Synthesis of Sustainable Ternary and Quaternary Nanostructured Cu2SnS3, Cu2ZnSnS4, and Cu2ZnSnSe4 Chalcogenides for Thermoelectric Applications

et al. 2023

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“…Here, ε represents the permittivity, electron charge is denoted by q, ψ gives the electrostatic potential and n and p represent the concentration of electrons and that of free holes respectively, trapped electrons is given by n t while p t gives trapped hole, concentrations of ionized donor-like doping is given by N D + and concentration of ionized acceptor-like doping is given by N A − , R n (x), R p (x) are the rates of recombination for electrons and holes, G(x) gives the rate of generation, J n and J p show the current densities for electron and hole respectively. It has been applied to simulation research on several solar cell types [47][48][49][50][51][52].…”

Section: Simulation Methodologymentioning

confidence: 99%

Investigation via simulation of the influence of defects on the photovoltaic performance of single-junction perovskite solar cells based on MAPbI3 using SCAPS-1D

Prem Pratap Singh,

Kripa Shanker Singh

2023

IJMRAST

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This communication presents a numerical simulation study conducted on Perovskite Solar Cells (PSCs) featuring MAPbI3 as the light-absorbing layer, utilizing the Solar Cell Capacitance Simulator (SCAPS-1D) software. The present study focuses on a single-junction solar cell architecture comprising TiO2/MAPbI3/Spiro-OMeTAD. SCAPS was employed to simulate how changes in the thickness of the absorber layer and the concentration of charges and defects within the absorber material affect the photovoltaic performance parameters of PSCs. The straightforward architecture of the solar cell has streamlined the investigation and optimization of device parameters. The 1D optimization of the PSC proposed in this study has led to optimized thickness of active layers, as well as the concentration of charges and defects within the MAPbI3 absorber material. The present research work reports an optimum thickness of 450 nm for MAPbI3 absorber material. The optimized concentration of defects has been found to be 1014 cm-1. The defect charge type in the absorber layer has not been found to affect the photovoltaic parameters of the PSC.

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“…On the other hand, the development of cheap, environmentally friendly cells is an important point to take into account. The second generation of PV devices has attracted the attention of many researchers, especially the ternary chalcogenides or sulfosalts materials, with the intention of revolutionizing industrial PV thin films [1,2]. The purpose is to replace the materials commonly used, in particular cadmium telluride (CdTe), selenide sulfide (CdS) [3], copper-indiumgallium selenide (CIGS), and silicon [4,5], because of the toxicity of cadmium and gallium.…”

Section: Introductionmentioning

confidence: 99%

Optoelectrical properties of the ternary chalcogenide SnSb₂S₅ as a new absorber layer for photovoltaic application

Kraidy,

El Radaf,

Zeinert

et al. 2024

J. Phys. D: Appl. Phys.

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A new material, tin antimony sulfide (SnSb2S5) thin films, considering different thicknesses (200 nm, 312 nm and 431 nm), were obtained by thermal evaporation onto a glass substrate. The films were studied electrically (I-V dependence) and optically to highlight their properties as photoanodes in thin film photovoltaic (PV) devices. The I-V characteristic curves showed n-type semiconductor samples with an electrical conductivity of 10-3(ohm. cm)-1 under white light excitation. The values of the absorption coefficient (α) and extinction coefficient (K) were found to be enlarged by increasing the layer thickness. The SnSb2S5 films displayed a high absorption coefficient of 105cm-1. The studied physical characterizations of tin antimony sulfide (SnSb2S5) samples showed interesting optical and electrical properties for good absorber layers in thin film solar cell devices.

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Role of defect density in absorber layer of ternary chalcogenide Cu2SnS3 solar cell

Cited by 15 publications

References 26 publications

Mechanochemical Synthesis of Sustainable Ternary and Quaternary Nanostructured Cu2SnS3, Cu2ZnSnS4, and Cu2ZnSnSe4 Chalcogenides for Thermoelectric Applications

Mechanochemical Synthesis of Sustainable Ternary and Quaternary Nanostructured Cu2SnS3, Cu2ZnSnS4, and Cu2ZnSnSe4 Chalcogenides for Thermoelectric Applications

Investigation via simulation of the influence of defects on the photovoltaic performance of single-junction perovskite solar cells based on MAPbI3 using SCAPS-1D

Optoelectrical properties of the ternary chalcogenide SnSb₂S₅ as a new absorber layer for photovoltaic application

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Role of defect density in absorber layer of ternary chalcogenide Cu2SnS3 solar cell

Cited by 15 publications

References 26 publications

Mechanochemical Synthesis of Sustainable Ternary and Quaternary Nanostructured Cu2SnS3, Cu2ZnSnS4, and Cu2ZnSnSe4 Chalcogenides for Thermoelectric Applications

Mechanochemical Synthesis of Sustainable Ternary and Quaternary Nanostructured Cu2SnS3, Cu2ZnSnS4, and Cu2ZnSnSe4 Chalcogenides for Thermoelectric Applications

Investigation via simulation of the influence of defects on the photovoltaic performance of single-junction perovskite solar cells based on MAPbI3 using SCAPS-1D

Optoelectrical properties of the ternary chalcogenide SnSb2S5 as a new absorber layer for photovoltaic application

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Optoelectrical properties of the ternary chalcogenide SnSb₂S₅ as a new absorber layer for photovoltaic application