Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)

Brault, J.; Gendry, M.; Grenet, Geneviève; Hollinger, G.; Désières, Y.; Benyattou, T.

doi:10.1063/1.122634

Cited by 142 publications

(91 citation statements)

References 23 publications

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“…This thickness is close to that found by others [14,15] for InAs island formation on hIct.52&4&i bufiiers on InP substrates. " InAs island formation is expected to be promoted further by the In segregation obsemed at the surface of the growing buffer ,layer [9].…”

Section: Fundamental Investigations Of Growth Parameters Su~erlatticesupporting

confidence: 73%

Reciprocal-Space and Real-Space Analyses of Compositional Modulation in InAs/AlAs Short-Period Superlattices

et al. 1999

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/The microstructure of lateral composition modulation in InAs/AIAs superlattices grown by MBE on InP is examined. The use of x-ray difliaction, TEM, AFM, and STEM to characterize the modulations is discussed. Combining the information from these techniques gives increased insight into the phenomenon and how to manipulate it. Difiaction measures the intensity of modulation and its wavelength, and is used to identi~growth conditions giving strong modulation. The TEM and STEM analyses indicate that local compositions are modulated by as much as 0.38 InAs mole fraction. Plan-view images show that modulated structures consists of short (S0.2 pm) In-rich wires with a 2D organizationina(001) growth plane. However, growth on miscut substrates can produce a single modulation along the miscut direction with much longer wires (>0.4 pm), as desired for potential applications. Photoluminescence studies demonstrate that the modulation has large effects on the bandgap energy of the superlattice.

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Section: Fundamental Investigations Of Growth Parameters Su~erlatticesupporting

confidence: 73%

Reciprocal-Space and Real-Space Analyses of Compositional Modulation in InAs/AlAs Short-Period Superlattices

et al. 1999

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“…25 As QDots grown on InP(311)B substrates and InAs/In 0.52 Al 0. 48 As QDashes grown on InP(001) substrates. We will show the presence of two thermal activation energies in the photoluminescence (PL) quenching processes of both QDots and QDashes.…”

Section: à2mentioning

confidence: 99%

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Jahan

Hermannstädter

Huh

et al. 2013

Journal of Applied Physics

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Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells J. Appl. Phys. 113, 073505 (2013) Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2×2 transfer-matrix algebra J. Appl. Phys. 113, 073502 (2013) Influence of structural anisotropy to anisotropic electron mobility in a-plane InN Appl. Phys. Lett. 102, 061904 (2013) Sub-250nm light emission and optical gain in AlGaN materials J. Appl. Phys. 113, 013106 (2013) Effects of pumping on propagation velocities of confined exciton polaritons in GaAs/AlxGa1−xAs double heterostructure thin films under resonant and non-resonant probe conditions J. Appl. Phys. 113, 013514 (2013) Additional information on J. Appl. Phys.

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“…Semiconductor quantum dashes (QDashes) are selfassembled nanostructures similar to quantum dots (QDs), however strongly elongated in one of the in-plane directions [1][2][3][4][5][6][7][8]. The majority of the reports regarding such strongly asymmetric objects concern the InAs-InP (001) material system, where elongation can easily be achieved spontaneously during the growth by molecular beam epitaxy [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

“…The majority of the reports regarding such strongly asymmetric objects concern the InAs-InP (001) material system, where elongation can easily be achieved spontaneously during the growth by molecular beam epitaxy [2][3][4][5]. The primary motivation to fabricate and study this type of structures was their proven application potential in optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures

et al. 2014

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The influence of acoustic phonons on the emission spectra of quantum dashes (QDashes), that are quasi-zerodimensional epitaxial nanostructures with significant shape anisotropy, is investigated both experimentally and theoretically. Photoluminescence (PL) spectra of single InAs/InGaAlAs/InP (001) QDashes exhibit sidebands of the main emission peak, clearly indicating the contribution of phonon-assisted emission to the exciton luminescence, which dominates the PL line shape at higher temperatures (between 50 and 100 K, usually). By utilizing the independent boson model we perform systematic and comprehensive studies of the influence of the overall geometry of quantum confinement on this spectral feature in an uncommon quantum system. A comparison of the experimental data and the results of modeling have confirmed the existence of two types of states differing in the spatial confinement and symmetry within one sample, i.e., typical for large elongated objects or characteristic for smaller and more symmetric structures. The latter are supposed to correspond to local widenings or zigzag bends present in some of the dashes and acting as additional localization centers, which confine excitons in a much smaller volume and decrease effectively the resulting in-plane anisotropy. Those observations evidence a nontrivial spatial character of the quantum confinement in these structures. They are consistent with our previous polarization-resolved study on the QDash ensemble and correlate well with the exciton decay times, and the spectral-diffusion-dominated line broadenings at low temperatures reflecting the effect of electric field fluctuations on the excitons of a different spatial extension. Finally, we demonstrate a pronounced suppression of phonon-induced decoherence for such strongly elongated nanostructures.

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Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)

Cited by 142 publications

References 23 publications

Reciprocal-Space and Real-Space Analyses of Compositional Modulation in InAs/AlAs Short-Period Superlattices

Reciprocal-Space and Real-Space Analyses of Compositional Modulation in InAs/AlAs Short-Period Superlattices

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures

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