Role of Boron in Amorphous-InGaZnO Film for Resistance Control Technique

Yasuta, Keisuke; Ui, Toshimasa; Nagao, Tomokazu; Matsuo, Daisuke; Sakai, Toshihiko; Setoguchi, Yoshitaka; Takahashi, Eiji; Andoh, Yasunori; Tatemichi, Junichi

doi:10.36463/idw.2021.0956

Cited by 1 publication

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“…In a-IGZO TFT processing, plasma treatment method as the a-IGZO sheet resistance reduction in the source and drain (S/D) region is widely used (3,4). On the other hand, we propose ion implantation method for the sheet resistance reduction, which has penetration ability and microfabrication processability (5)(6)(7)(8). In our previous work, we elucidated that a-IGZO sheet resistance reduction can be attributed to oxygen vacancy (Vo) generated by noble gas argon ion (Ar + ) implantation.…”

Section: Introductionmentioning

confidence: 99%

(Invited, Digital Presentation) Ion Implantation for Amorphous-InGaZnO Sheet Resistance Control Technique

Ui¹,

Yasuta²,

Yamane³

et al. 2022

ECS Trans.

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As a next-generation electronics material, amorphous-InGaZnO (a-IGZO) film devices were investigated. In order to further utilize a-IGZO films, we carried out conventional ion of boron (B+) or neon (Ne+) implantations in a-IGZO thin films on glass and analyzed the implanted a-IGZO via Hall measurement with wet etching. In addition, a-IGZO thin film transistor processes with the implantation were carried out. As a result, we find that both ions drastically decrease a-IGZO sheet resistances. However, we observed oxygen vacancy area increase in the case of Ne+ implanted a-IGZO in 300 oC post annealing, which indicates Ne diffuses in a-IGZO film. On the other hand, B diffusion was not observed by depth profile comparison between the implanted samples with and without annealing. Furthermore, we extract key device parameters, such as effective channel length and ON/OFF current ratio, which can be applied to a-IGZO device processing.

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