Role of ammonia in depositing silicon nanoparticles by remote plasma enhanced chemical vapor deposition

Aguilar, Rodríguez; Arenas, Jesús; Pérez-Martínez, Ana Laura; Alonso, J. C.

doi:10.1016/j.matlet.2014.03.144

Cited by 8 publications

(7 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The PL spectra of the Sample B shows two main central peaks and two side shoulders that may be a result from an interference effect due to the bigger film thickness [ 57 , 58 ]. The absorbance ( A ) spectra of the films ( Figure 6 b) show optical absorption peaks and edges distributed in the wavelength range from infrared to UV.…”

Section: Resultsmentioning

confidence: 99%

Optical Absorption and Visible Photoluminescence from Thin Films of Silicon Phthalocyanine Derivatives

et al. 2014

View full text Add to dashboard Cite

The interest of microelectronics industry in new organic compounds for the manufacture of luminescent devices has increased substantially in the last decade. In this paper, we carried out a study of the usage feasibility of three organic bidentate ligands (2,6-dihydroxyanthraquinone, anthraflavic acid and potassium derivative salt of anthraflavic acid) for the synthesis of an organic semiconductor based in silicon phthalocyanines (SiPcs). We report the visible photoluminescence (PL) at room temperature obtained from thermal-evaporated thin films of these new materials. The surface morphology of these films was analyzed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). AFM indicated that the thermal evaporation technique is an excellent resource in order to obtain low thin film roughness when depositing these kinds of compounds. Fourier transform infrared spectroscopy (FTIR) spectroscopy was employed to investigate possible changes in the intra-molecular bonds and to identify any evidence of crystallinity in the powder compounds and in the thin films after their deposition. FTIR showed that there was not any important change in the samples after the thermal deposition. The absorption coefficient (α) in the absorption region reveals non-direct transitions. Furthermore, the PL of all the investigated samples were observed with the naked eye in a bright background and also measured by a spectrofluorometer. The normalized PL spectra showed a Stokes shift ≈ 0.6 eV in two of our three samples, and no PL emission in the last one. Those results indicate that the Vis PL comes from a recombination of charge carriers between conduction band and valence band preceded by a non-radiative relaxation in the conduction band tails.

show abstract

Section: Resultsmentioning

confidence: 99%

Optical Absorption and Visible Photoluminescence from Thin Films of Silicon Phthalocyanine Derivatives

et al. 2014

View full text Add to dashboard Cite

show abstract

“…The substrate temperature for deposition was 300 C. The flow rates of SiH 2 Cl 2 , H 2 , and Ar were kept constant at 5, 20, and 75 sccm, respectively. In order to change the size of the Si-QDs embedded in the films, and based on our previous experimental works, 7,16 the flow rates of NH 3 chosen for depositing each of the four different samples were 50 (S1_50), 100 (S2_100), 200 (S3_200), and 300 (S4_300) sccm. Also based on the knowledge of the deposition rate from our previous works, the table of colors of Si 3 N 4 films at various ranges of film thickness, 24 and the direct naked eye view of the growing films, the deposition time was controlled for each film to obtain nanometric films with thickness in the range from 77 to 93 nm (blue color).…”

Section: Methodsmentioning

confidence: 99%

“…, measured by XPS, in the range from 1.16 to 0.7, but, however, the refractive index of the films at 632 nm remains almost constant with low values 1.82-1.85. 7,15,16 Based on the general trends mentioned above for the refractive index of silicon-silicon nitride and silicon-silicon oxide compounds, it seems contradictory that silicon rich silicon nitride films have refractive index values lower than 2.0. The explanation of the origin of the low refractive index of these films in terms of their composition was the main motivation for the present work.…”

Section: Introductionmentioning

confidence: 99%

Modeling of the refractive index and composition of luminescent nanometric chlorinated-silicon nitride films with embedded Si-quantum dots

Rodríguez-Gómez

Escobar‐Alarcón

Serna

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

The refractive index of nanometric (<100 nm) chlorinated-silicon nitride films with embedded silicon quantum dots, prepared by remote plasma enhanced chemical vapor deposition was investigated by spectroscopic ellipsometry. The complex refractive indexes and thicknesses of the films were obtained from the ellipsometric measurements using the Cauchy model. The chemical composition of the bulk of the films, including the hydrogen, chlorine, and oxygen content, was measured by elastic forward analysis (EFA) and X-ray photoelectron spectroscopy (XPS). The EFA and XPS results indicate that the films are composed of nearly stoichiometric silicon nitride (Si 3 N 4) with different amounts of hydrogen, chlorine, and oxygen, and that their top surface is oxidized. Based on the composition results the refractive index of the films was fitted using the effective medium approximation considering the system: Si substrate þ Si 3 N 4 þ Si þ voids þ top ultrathin oxidized surface layer.

show abstract

“…1 contains the photoluminescence spectra of seven thin lms constituted by SiQDs embedded in a silicon nitride matrix. Those samples were used in a previous study 41 and were deposited by using our RPECVD system with different NH 3 ow rates. With the exception of sample E, which has a lm thickness of 375 nm, all other samples of the group have thicknesses ranging between 78 and 85 nm.…”

Section: Fabrication and Selection Of The Emission Eld (Siqds)mentioning

confidence: 99%

“…The linear model expressed in eqn (1), is a tool that allows us to grow SiQDs in a controlled way. 41 MPLp ¼ À0.3079 Â Aflow + 557.6328…”

Section: Fabrication and Selection Of The Emission Eld (Siqds)mentioning

confidence: 99%

Photoluminescence enhancement from silicon quantum dots located in the vicinity of a monolayer of gold nanoparticles

et al. 2015

View full text Add to dashboard Cite

show abstract

Role of ammonia in depositing silicon nanoparticles by remote plasma enhanced chemical vapor deposition

Cited by 8 publications

References 16 publications

Optical Absorption and Visible Photoluminescence from Thin Films of Silicon Phthalocyanine Derivatives

Optical Absorption and Visible Photoluminescence from Thin Films of Silicon Phthalocyanine Derivatives

Modeling of the refractive index and composition of luminescent nanometric chlorinated-silicon nitride films with embedded Si-quantum dots

Photoluminescence enhancement from silicon quantum dots located in the vicinity of a monolayer of gold nanoparticles

Contact Info

Product

Resources

About