Role of a nucleation layer in suppressing interfacial pitting in

Ballal, A. K.; Salamanca‐Riba, L.; Partin, D. L.; Heremans, Joseph P.; Green, L.; Fuller, B. K.

doi:10.1007/bf02661666

JEM

1993

DOI: 10.1007/bf02661666

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Role of a nucleation layer in suppressing interfacial pitting in

A. K. Ballal

L. Salamanca‐Riba

D. L. Partin

et al.

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Cited by 2 publications

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“…For the material system with large mismatch, the high-quality epitaxial layer is not easily obtained. The use of intermediate buffer [12] or nucleation layer [13] is beneficial to the improvement of the epitaxial quality. InAsSb ternary on GaAs has a lattice mismatch between 7.2% and 14.5%, depending on the content of Sb.…”

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confidence: 99%

Growth and Characterization of InAs _{1–
x} Sb _x with Different Sb Compositions on GaAs Substrates

Sun

Wang

et al. 2015

Chinese Phys. Lett.

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InAs1−𝑥Sb𝑥 with different compositions is grown by molecular beam epitaxy on (100)-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality and surface morphology. Hall measurements show that the carrier concentration increases with the composition of Sb. The electron mobility decreases initially, when Sb composition exceeds a certain value, and the mobility increases slightly. In this work, we emphasize the comparison of crystal quality, surface morphology and electrical properties of epilayers with different Sb compositions.

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mentioning

confidence: 99%

Growth and Characterization of InAs _{1–
x} Sb _x with Different Sb Compositions on GaAs Substrates

Sun

Wang

et al. 2015

Chinese Phys. Lett.

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Significance of a Nucleation Layer in Inhibiting Interfacial Pitting in InAs Films Grown by Two-Step MOVCD on (100) Inp Substrates

Ballal

Salamanca‐Riba

Partin³

1993

MRS Proc.

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In this paper, we study the significance of a low temperature nucleation layer and its role in inhibiting interfacial pitting vapor deposition. Transmission electron microscopy and scanning electron microscopy studies show that severe interfacial pitting occurs for thin nucleation layers of average thicknesses of 200Å and 400Å. For these average nucleation layer thicknesses we have found that the InAs islands do not cover the entire substrate surface during the low temperature deposition. Hence, when the film is heated to a higher temperature for the growth of the remainder of the film severe pitting at the heterointerface is produced. The thermal etchpits are sources of threading dislocations, which propagate to the surface of the film. For thicker nucleation layers we observe no interfacial pitting. Our studies show that there is an optimum nucleation layer thickness for which high quality InAs films with reduced threading dislocation densities and relatively high electron mobilities are obtained. Both electrical and structural studies suggest that ∼ 800Å is an optimum thickness of the low temperature nucleation layer.

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Role of a nucleation layer in suppressing interfacial pitting in

Cited by 2 publications

References 14 publications

Growth and Characterization of InAs _{1–
x} Sb _x with Different Sb Compositions on GaAs Substrates

Growth and Characterization of InAs _{1–
x} Sb _x with Different Sb Compositions on GaAs Substrates

Significance of a Nucleation Layer in Inhibiting Interfacial Pitting in InAs Films Grown by Two-Step MOVCD on (100) Inp Substrates

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Role of a nucleation layer in suppressing interfacial pitting in

Cited by 2 publications

References 14 publications

Growth and Characterization of InAs 1– x Sb x with Different Sb Compositions on GaAs Substrates

Growth and Characterization of InAs 1– x Sb x with Different Sb Compositions on GaAs Substrates

Significance of a Nucleation Layer in Inhibiting Interfacial Pitting in InAs Films Grown by Two-Step MOVCD on (100) Inp Substrates

Contact Info

Product

Resources

About

Growth and Characterization of InAs _{1–
x} Sb _x with Different Sb Compositions on GaAs Substrates

Growth and Characterization of InAs _{1–
x} Sb _x with Different Sb Compositions on GaAs Substrates