2013 15th European Conference on Power Electronics and Applications (EPE) 2013
DOI: 10.1109/epe.2013.6631910
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Robustness requirements on semiconductors for high power applications

Abstract: Robustness of power semiconductors is a key parameter for reliable converter operation. This paper discusses the main robustness characteristics limiting the performance in high power converters. It shows necessary design precautions for the circuit design and also explains where the semiconductor manufacturer has to improve the devices with the aim of maximum electrical exploitation of the semiconductor.

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“…There are many factors that cause voltage unbalanced sharing for IGBTs connected in series, such as gate drive delays, external circuit parameters, and the spread of various IGBT dynamic and static parameters. Even if IGBTs have the same design but are manufactured in different batches, there will still be some variations in their respective parameters [22], e.g. intrinsic capacitances and gate resistances.…”
Section: Voltage Divergence Analysismentioning
confidence: 99%
“…There are many factors that cause voltage unbalanced sharing for IGBTs connected in series, such as gate drive delays, external circuit parameters, and the spread of various IGBT dynamic and static parameters. Even if IGBTs have the same design but are manufactured in different batches, there will still be some variations in their respective parameters [22], e.g. intrinsic capacitances and gate resistances.…”
Section: Voltage Divergence Analysismentioning
confidence: 99%