Robust Memristive Fiber for Woven Textile Memristor

Abstract

Memristors with an intrinsic crossbar structure and high computing capability offer promising opportunities for the flexible information-processing component that can well integrate with the interwoven structure of electronic textiles. However, it remains difficult to achieve uniform inorganic memristive layer at nanometer thickness on the curved surface of fiber electrode, thus hindering the applications of textile memristors. Here, a high-performing and reliable textile memristor made of robust Pt/CsPbBr 3 fiber through an electricfield-assisted assembly method is reported. The textile memristor exhibits a cycle to cycle variation of less than 8% and an average set voltage of ≈0.16 V, which is lower than that of the majority of planar metal-oxide memristors. The flexible and mechanically robust Pt/CsPbBr 3 fibers are woven into a scalable textile memristor array with good device-to-device reproducibility. This textile memristor can be seamlessly integrated with textile electronics toward a smart clothes system to accurately process complicated physiological information, providing an effective interactive interface for intelligent healthcare.

High-Performance Flexible Polymer Memristor Based on Stable Filamentary Switching

“…In recent years, flexible electronics, such as flexible sensors, wearable devices, and medical implants become more and more important in various scenes of modern life. − However, as the key role, data-process system is the weak part of intelligent flexible electronics . In-memory-computing memristors with good flexibility have the potential to reverse this dilemma due to their high computing efficiency and low energy consumption.…”

“…48−50 However, as the key role, data-process system is the weak part of intelligent flexible electronics. 51 In-memory-computing memristors with good flexibility have the potential to reverse this dilemma due to their high computing efficiency and low energy consumption. The resulting PEI-AgClO 4 device was fabricated on a flexible substrate, and the resistive switching behavior was measured under different bending radii and after different bending cycles.…”

Synaptic and Gradual Conductance Switching Behaviors in CeO2/Nb–SrTiO3 Heterojunction Memristors for Electrocardiogram Signal Recognition

“…It is very important for the memristor to adjust the conductance continuously and evenly by positive and negative stimulation, which contributes to realizing the practical application. − As shown in Figure a, the positive and negative stimulation are induced by stepped pulses (Figure S10). The potentiation and depression processes are composed of 80 states and repeat for 100 cycles.…”

Flexible ZnO Nanosheet‐Based Artificial Synapses Prepared by Low‐Temperature Process for High Recognition Accuracy Neuromorphic Computing

“…reported a reliable Pt/CsPbBr 3 textile memristor fabricated by electric‐field‐assisted assembly method for smart clothes system and intelligent healthcare. [ 16 ] The flexible memristor based on poly (1,3,5‐trivinyl‐1,3,5‐trimethyl cyclotrisiloxane) was demonstrated by Jang et al. to realize high level simulation for face recognition in the bending state.…”