Robust interface-induced unusual anomalous Hall effect in Mn3Sn/Pt bilayers

Liu, Jun-Jie; Meng, Kangkang; Chen, Ji-Kun; Wu, Yong; Miao, Jun; Xu, X. D.; Jiang, Yong

doi:10.1007/s12598-022-02013-1

Cited by 3 publications

(1 citation statement)

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“…如引言部分所述, 根据以往来自不同课题组对 Mn 3 Sn的研究可知, 即便是很纯的六角Kagome 相, 其磁结构仍然对其成分(如Mn含量)和微观结构(如缺陷浓度)等都有很强的依赖关系 [15,16] .…”

Section: 室温磁性和磁输运性能unclassified

Transport characterization of magnetic phase transition in Mn3Sn thin films

Tan,

Gao,

Deng

et al. 2024

Acta Phys. Sin.

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In recent years, topological antiferromagnetic materials with hexagonal Kagome structure have attracted great research interest due to their unique properties. Despite having a net magnetic moment close to zero, these topological antiferromagnets exhibit strong magnetoelectric, magneto-optical, and magnetothermal effects, with strength comparable to that of ferromagnetic materials, which makes them highly valuable for various applications. After extensive studies of several years, people have realized that most of the unique properties of topological antiferromagnets are actually closely related to their magnetic structures. However, it has been found that the magnetic structure of these materials is highly sensitive to their chemical composition and growth conditions. Therefore, it is crucial to develop a universal and simple method for measuring the magnetic structure and determining the magnetic phase transitions of hexagonal Kagome topological antiferromagnetic materials, which can severe as a good supplement for the current high-energy neutron diffraction approach, that is not accessible for ordinary laboratories. In this study, we successfully prepared high-quality (11<img >0)-oriented hexagonal Kagome antiferromagnetic Mn3Sn thin films on (1<img >02)-oriented Al2O3 single crystal substrates using the pulsed laser deposition (PLD) method. After systematically measuring how the magnetic and transport properties of a Mn3Sn thin film change with temperature, we found that its magnetization curve, Hall resistivity curve, and magnetoresistance curve exhibit certain anomalous features at some or all of its three magnetic phase transition temperatures. These features can serve as good evidences of magnetic phase transitions in this hexagonal Kagome antiferromagnetic Mn3Sn thin film, or even could be used to measure the temperature of these magnetic phase transitions. Our work contributes to the further advancement of the application of hexagonal Kagome topological antiferromagnetic materials in spin electronic devices.

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Section: 室温磁性和磁输运性能unclassified