Robust ferromagnetism in two-dimensional GeC/CrN heterobilayers

Abstract

The germanium carbide (GeC) and chromium nitride (CrN) heterobilayers exhibit half-metallicity and a ferromagnetic ground state, with high Curie temperatures even under strain, making them promising for spintronic applications.

Electronic Properties and Magnetism of VN/Ga2O2/VN Spin Valves

“…13 In addition, the Curie temperature below room temperature limits the wide scale of spintronics devices, 14 and the search for ferromagnetic materials with prominent Curie temperature becomes our top priority. 15 At present, there has been an increasing number of studies on 2D GaN-based low-dimensional spintronic devices, such as VN/GaN/VN spin valves, 16 CrN/P/CrN spin valves, 17 GaN/CrI 3 vdW heterostructures, 18 GaN/BP, 19 GaN/AlN, 20 h-XN (X = B, Al, Ga, In), 21 MBOP/MBP, 22 WSe 2 /CrSnSe 3 heterostructure, 23 GeC/CrN heterobilayers. 24 We speculate that Ga 2 O 2 , which has properties similar to those of GaN and has a high Curie temperature, can also be studied for lowdimensional spintronic devices.…”

Interfacial Electronic States of GeC/g‐C3N4 van der Waal Heterostructure with Promising Photocatalytic Activity via Hydrogenation

“…Several monolayer materials have been researched to build 2D vdWHs, such as B-doped g-C 3 N 4 /SnS 2 , [51] arsenene/g-C 3 N 4 , [52] In 2 SeS/g-C 3 N 4 , [53] C 3 N 4 /graphene/g-C 3 N 4 , [54] MXene/g-C 3 N 4 , [55] Bi 2 O 3 /g-C 3 N 4 [56] and g-C 3 N 4 /MoS 2 [57] in both experimental and theoretical domains because of the exceptional properties of staggered type-II band alignment in photocatalysis. Moreover, GeC-based vdWHs such as GeC/MoS 2 , [58] GeC/ZnTe, [59] GeC/ BP, [60] GeC/SiC, [61] GeC/GaN, [62] GeC/CrN [61] and GeC/MX 2 (M=Mo and W; X=S and Se) [63] are also widely considered to tune the electronic properties of GeC.…”