Robust Energy Storage Property of La-Doped PZT Films Within a Wide Temperature Range

Abstract

Antiferroelectric (AFE) films have received a lot of attention for their high energy storage density and temperature stability, giving them potential in electrostatic energy storage devices. In this work, La-doped PZT AFE films were prepared through a sol−gel procedure, and energy storage properties within a wide temperature range (73−533 K) were explored. Typical dipoles rotate in one direction along electric fields, combined with phase transition behavior. The polarization behavior is modulated by both electric field and temperature. With increasing temperature, the saturation polarization strength decreases due to the phase transition from the AFE state to the ferroelectric state. Besides, the temperature dependence of electrical properties was investigated, and the energy storage density of Pb 0.97 La 0.02 (Zr 0.95 Ti 0.05 )O 3 films was about 5.84 J/cm 3 in the low temperature range (<273.15 K). All results indicate the great potential of AFE films in pulse power device applications, especially in low-temperature ranges.