Abstract:Under certain conditions, ion bombardment of semiconductors can lead to the formation of a ripple structure on the surfaces of these materials. This paper considers the dependence of the ripple wavelength on the ion energy. It considers and develops ion energy dependence of the Bradley-Harper theory in two limiting conditions. The one limit considers high temperature and low ion areic dose rate conditions, while the other limit applies to low temperatures and high areic dose rates. The paper gives a review oft… Show more
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