2014
DOI: 10.1186/1556-276x-9-439
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Ripple coarsening on ion beam-eroded surfaces

Abstract: The temporal evolution of ripple pattern on Ge, Si, Al2O3, and SiO2 by low-energy ion beam erosion with Xe + ions is studied. The experiments focus on the ripple dynamics in a fluence range from 1.1 × 1017 cm-2 to 1.3 × 1019 cm-2 at ion incidence angles of 65° and 75° and ion energies of 600 and 1,200 eV. At low fluences a short-wavelength ripple structure emerges on the surface that is superimposed and later on dominated by long wavelength structures for increasing fluences. The coarsening of short wavelength… Show more

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Cited by 42 publications
(23 citation statements)
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“…At positions sufficiently far from the Al wedge, the IBS experiments show that ripples were generated on both SiO 2 and Si by the Ar ion beam sputtering without Al co-deposition. This is in accordance with earlier studies [5,7]. The surface evolution in these cases, at least in the low-fluence regime, can be described following the classical BH model [61].…”
Section: Discussionsupporting
confidence: 77%
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“…At positions sufficiently far from the Al wedge, the IBS experiments show that ripples were generated on both SiO 2 and Si by the Ar ion beam sputtering without Al co-deposition. This is in accordance with earlier studies [5,7]. The surface evolution in these cases, at least in the low-fluence regime, can be described following the classical BH model [61].…”
Section: Discussionsupporting
confidence: 77%
“…The coarsening of the patterns on the Si surface is due to the simultaneous Al deposition during IBS. Such coarsening is different from previously reported coarsening with increasing sputtering time [7,9,12,[63][64][65]. Although some theoretical work has explained the coarsening based on numerical models [66,67], a model and simulation that can accurately predict the coarsening due to the impurity co-deposition remains unavailable at this time.…”
Section: Distance Dependence Of Smooth Si Morphology Treated By Obliqcontrasting
confidence: 49%
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“…The ion fluence was varied from 1.1 × 1017 to 1.3 × 1019 ions/cm2. They observed the coarsening process to be independent of the material used [26]. Zhou et al studied the formation of ripple using a focused ion beam (FIB)-scanning electron microscope setup using 30-keV Ga+ on the Ge(001) surface [27].…”
Section: Introductionmentioning
confidence: 99%