RHEED study of oxygen ion implantation effects on GaAs surface

Abstract

The GaAs(OO1) surfaces were submitted to 10-100 keV oxygen ion bombardment at room temperature and then they were thermally annealed in order to restore the initial topography. The present paper is motivated by a desire of correlate the electronic properties of GaAs crystal to its structure. It is the main purpose of this work to investigate the nature of damage conducted by the implanted oxygen ion and to show the changes in the structure of GaAs(OO1) surface resulting from surface disorder due to ion implantation.