RF Power-Handling Performance for Direct Actuation of Germanium Telluride Switches

Leon, Alexandre; Reig, B.; Perret, Etienne; Podevin, Florence; Saint-Patrice, D.; Puyal, Vincent; Lugo-Alvarez, Jose; Ferrari, Philippe

doi:10.1109/tmtt.2019.2946145

Cited by 25 publications

(9 citation statements)

References 27 publications

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“…GeTe exhibits exceedingly fast crystallization behavior and it is the most commonly used phase change material in phase change switch [13,14]. Subsequently, the main structures of phase change switches have been developed into four-port direct heating types and four-port indirect heating types, which effectively avoid the shortcomings of two-port structures by separating the heating path and the RF signal transmission path [15,16]. The two-port switch (one RF port and one GND connection) has a simple structure and large isolation.…”

Section: Introductionmentioning

confidence: 99%

Novel four-port RF phase change switches based on GeTe thin film

Gao

et al. 2023

J. Micromech. Microeng.

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An indirect-heated phase-change switch using germanium telluride (GeTe) has been fabricated using thermal actuation driven by thin film heater on the model. Switches require a low ON-state resistance and a high OFF-state resistance with OFF/ON resistance ratio of 105. The finite element analysis simulation is applied to simulate the temperature of individual node GeTe with different microwave heating pulses. Finally, in order to reduce the phase-change time and increase the switching speed of indirectly heated switching structures, a new four-port indirectly heated phase change switching structure is proposed. In this paper, the heat dissipation of the switch is increased by etching deep grooves on the back of the switch. This structure obviously reduces the phase change time compared to conventional indirectly heated phase change switches the time between ON-state and OFF-state is reduced by more than 19% and the total process is reduced by more than 47%. The GeTe phase-change switches with etched grooves not only significantly increases the switching speed, but also reduces the risk of recrystallisation of the phase change material.

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Section: Introductionmentioning

confidence: 99%

Novel four-port RF phase change switches based on GeTe thin film

Gao

et al. 2023

J. Micromech. Microeng.

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“…However, the conventional RF switches are based on volatile diodes and transistors so that the switches suffer from unnecessary energy consumption during idle periods. − Therefore, nonvolatile RF switches that afford zero direct-current (DC) power have been suggested based on resistive random-access memory (RRAM), conductive-bridge random-access memory (CBRAM), and phase-change memory (PCM) devices (Supporting Table 1). − …”

mentioning

confidence: 99%

Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications

et al. 2023

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Recently, nonvolatile resistive switching memory effects have been actively studied in two-dimensional (2D) transition metal dichalcogenides and boron nitrides to advance future memory and neuromorphic computing applications. Here, we report on radiofrequency (RF) switches utilizing hexagonal boron nitride (h-BN) memristors that afford operation in the millimeter-wave (mmWave) range. Notably, silver (Ag) electrodes to h-BN offer outstanding nonvolatile bipolar resistive switching characteristics with a high ON/OFF switching ratio of 1011 and low switching voltage below 0.34 V. In addition, the switch exhibits a low insertion loss of 0.50 dB and high isolation of 23 dB across the D-band spectrum (110 to 170 GHz). Furthermore, the S 21 insertion loss can be tuned through five orders of current compliance magnitude, which increases the application prospects for atomic switches. These results can enable the switch to become a key component for future reconfigurable wireless and 6G communication systems.

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“…Steering a beam electronically involves interplay between the separation of the individual antenna elements and how the individual elements are fed (in both amplitude and phase). Mechanical relays and even manually thrown switches were used in the earliest antennas but more modern means using solid-state components such as field effect transistor (FET)based switches PIN diodes, microelectrical mechanical systems (MEMS), and switches based on phase-change materials are widely employed [44]- [53]. Among the main considerations for these types of reconfiguration elements are the loss each one introduces into the system, the speed in which they switch, the energy required to switch, the energy required to maintain the system in the switched state, power handling and, especially for high frequency use, the parasitics of the elements.…”

Section: Reconfigurabilitymentioning

confidence: 99%

Breakthroughs in Microwaves: Programmable Terahertz Chip-Scale Surfaces and Systems—An Interview With Dr. Kaushik Sengupta

Caverly¹

2021

IEEE J. Microw.

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This article is the next in the periodic Breakthroughs in Microwaves series. This series is intended to highlight recent accomplishments, especially to those new to the field, by researchers in microwave engineering that hold promise. Up until about 15 years ago, there was a distinct dearth of applications in the region between approximately 100 GHz and the infrared region except in radio astronomy. In the last 10 to 15 years, however, there has been significant research in this frequency range. Of particular interest are fully integrated solutions that utilize standard integrated circuit processes, made possible by the sub-millimeter wavelengths inherent to this frequency range. Increased parasitics and coupling make design using standard microwave techniques problematic when scaled to the THz range, but new thinking has emerged that looks at the full problem in an electromagnetic sense with full co-design of all elements needed. This article first provides the reader information on previous THz technology applications and then presents an overview of traditional antenna beamforming structures. This introduction is then followed by a discussion of new programmable chip-scale electromagnetic surfaces as one of the solutions for THz applications. This article ends with a lively discussion with one of the leaders in this technology, Dr. Kaushik Sengupta, who discusses further insight into this pioneering technique.INDEX TERMS Beam steering, antenna radiation patterns imaging, sensor systems and applications, reconfigurable intelligent surfaces.This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.

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RF Power-Handling Performance for Direct Actuation of Germanium Telluride Switches

Abstract: * 2xW in shunt see definition in section III, equation (2) estimated (as twice that in series configuration as is almost doubled)

Cited by 25 publications

References 27 publications

Novel four-port RF phase change switches based on GeTe thin film

Novel four-port RF phase change switches based on GeTe thin film

Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications

Breakthroughs in Microwaves: Programmable Terahertz Chip-Scale Surfaces and Systems—An Interview With Dr. Kaushik Sengupta

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RF Power-Handling Performance for Direct Actuation of Germanium Telluride Switches

Abstract: * 2xW in shunt **see definition in section III, equation (2) **estimated (as twice that in series configuration as is almost doubled)

Cited by 25 publications

References 27 publications

Novel four-port RF phase change switches based on GeTe thin film

Novel four-port RF phase change switches based on GeTe thin film

Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications

Breakthroughs in Microwaves: Programmable Terahertz Chip-Scale Surfaces and Systems—An Interview With Dr. Kaushik Sengupta

Contact Info

Product

Resources

About

Abstract: * 2xW in shunt see definition in section III, equation (2) estimated (as twice that in series configuration as is almost doubled)