2017
DOI: 10.7567/jjap.56.04cr09
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RF power FinFET transistors with a wide drain-extended fin

Abstract: Drain-extended FinFET transistors for RF power applications have been fabricated and is presented in this paper. Power FinFETs with a wide drain extension are proposed to reduce the drain resistance. Compared with conventional drain-extended FinFETs, our proposed new devices exhibit lower on-resistances and better high-frequency performances while keeping a similar breakdown voltage. The enhancements of the on-resistance and peak cutoff frequency are 16 and 56%, respectively, under an optimal drain-extension l… Show more

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Cited by 2 publications
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