RF Plasmas in Methane: Prediction of Plasma Properties and Neutral Radical Densities with Combined Gas-Phase Physics and Chemistry Model

Gogolides, Εvangelos; Mary, David A.S.G.; Rhallabi, A.; Turban, G.

doi:10.1143/jjap.34.261

Cited by 89 publications

(57 citation statements)

References 26 publications

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“…The detail of the numerical scheme is based on earlier works. [18][19][20][21] The number densities n j of electrons, neutrals and ions ͑subscript j represents species͒ are calculated spatiotemporally by the following continuity equations:…”

Section: Plasma Modelingmentioning

confidence: 99%

Predicting the amount of carbon in carbon nanotubes grown by CH4 rf plasmas

Okita

Suda

Ozeki

et al. 2006

Journal of Applied Physics

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Carbon nanotubes ͑CNTs͒ were grown on Si substrates by rf CH 4 plasma-enhanced chemical vapor deposition in a pressure range of 1 -10 Torr, and then characterized by scanning electron microscopy. At 1 Torr, the CNTs continued growing up to 60 min, while their height at 4 Torr had leveled off at 20 min. CNTs hardly grew at 10 Torr and amorphous carbon was deposited instead. CH 4 plasma was simulated using a one-dimensional fluid model to evaluate the production and transport of radicals, ions, and nonradical neutrals. The amount of simulated carbon supplied to the electrode surface via the flux of radicals and ions such as CH 3 , C 2 H 5 , and C 2 H 5 + was consistent with estimations from experimental results.

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Section: Plasma Modelingmentioning

confidence: 99%

Predicting the amount of carbon in carbon nanotubes grown by CH4 rf plasmas

Okita

Suda

Ozeki

et al. 2006

Journal of Applied Physics

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“…4(c), most bound hydrogen atoms in the deposited films are bonded to sp 3 -hybridized carbon atoms. The CH 3 radical is the dominant radical in rf PECVD methane plasma [21]. The sp 3 -CH 3 species in the films are likely to occur by the decomposition of CH 4 molecules.…”

Section: Resultsmentioning

confidence: 99%

Deposition of silicon-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition using an intermittent supply of organosilane

Nakazawa

Kamata

Okuno

2015

Diamond and Related Materials

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“…This result is consistent with a number of previous reports. [28][29][30] Therefore, in this case it is more appropriate to use a Druyvesteyn-like distribution to calculate the electron/ion kinetic energy losses due to their recombination on the walls.…”

Section: Electron Energy Distribution Functionmentioning

confidence: 99%

Electron/ion energy loss to discharge walls revised: A case study in low-temperature, thermally nonequilibrium plasmas

Ren

Ostrikov

2008

Physics of Plasmas

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Reliable calculations of the electron/ion energy losses in low-pressure thermally nonequilibrium low-temperature plasmas are indispensable for predictive modeling related to numerous applications of such discharges. The commonly used simplified approaches to calculation of electron/ion energy losses to the chamber walls use a number of simplifying assumptions that often do not account for the details of the prevailing electron energy distribution function (EEDF) and overestimate the contributions of the electron losses to the walls. By direct measurements of the EEDF and careful calculation of contributions of the plasma electrons in low-pressure inductively coupled plasmas, it is shown that the actual losses of kinetic energy of the electrons and ions strongly depend on the EEDF. It is revealed that the overestimates of the total electron/ion energy losses to the walls caused by improper assumptions about the prevailing EEDF and about the ability of the electrons to pass through the repulsive potential of the wall may lead to significant overestimates that are typically in the range between 9 and 32%. These results are particularly important for the development of power-saving strategies for operation of low-temperature, low-pressure gas discharges in diverse applications that require reasonably low power densities.

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RF Plasmas in Methane: Prediction of Plasma Properties and Neutral Radical Densities with Combined Gas-Phase Physics and Chemistry Model

Cited by 89 publications

References 26 publications

Predicting the amount of carbon in carbon nanotubes grown by CH4 rf plasmas

Predicting the amount of carbon in carbon nanotubes grown by CH4 rf plasmas

Deposition of silicon-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition using an intermittent supply of organosilane

Electron/ion energy loss to discharge walls revised: A case study in low-temperature, thermally nonequilibrium plasmas

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