RF Plasma deposited amorphous carbon films Electronic and optical properties

Fabisiak, K.; Orzeszko, S.; Rozpo̵ch, F.; Szatkowski, J.

doi:10.1016/0022-3093(88)90453-x

Cited by 21 publications

(7 citation statements)

References 15 publications

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“…1. This statement seems to be confirmed by our previous observations [6] and both by increasing E, parameter and decreasing optical energy gap E, with increasing substrate temperature. In order to have more complete picture we have estimated additionally the lattice distortion energy ED using Street's approach [12] in the form…”

Section: Resultssupporting

confidence: 89%

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Photoluminescence of RF Glow Discharge Amorphous Carbon Films

Fabisiak

Rozpłoch

Szatkowski

et al. 1991

Phys. Stat. Sol. (a)

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Photoluminescence (PL) and near fundamental edge absorption measurements are performed for rf glow discharge hydrogenated amorphous carbon films (a‐C: H). The PL spectra depend strongly on substrate temperature Ts. Both, red‐shift of photoluminescence peak energy, EL, and decreasing photoluminescence intensity are observed with increasing Ts. A comparison of EL with optical energy gap Eg and with the Urbach parameter E0, shows that the interpretation of the results can be based on the band model where the valence and conduction band tails are nearly symmetrical and the position of the Fermi level, EF, is close to the gap center.

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Section: Resultssupporting

confidence: 89%

“…The samples of a-C : H were prepared from benzene vapour using an inductively coupled rf glow discharge apparatus, as it was previously described [6].…”

Section: Methodsmentioning

confidence: 99%

Photoluminescence of RF Glow Discharge Amorphous Carbon Films

Fabisiak

Rozpłoch

Szatkowski

et al. 1991

Phys. Stat. Sol. (a)

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“…39 It has been reported that the π-bonds, showing sp 2 coordination in graphitic carbon clusters of sixfold rings, lower the optical energy gap in amorphous carbon films including hydrogenated or fluorinated carbon films. [40][41][42][43][44][45][46] SiCF films show the aromatic carbon double bonds at 1500-1600 cm Ϫ1 in Fig. 3.…”

Section: Optical Propertymentioning

confidence: 99%

Ultralow-k silicon containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

Jin

Ajmera

Lee

et al. 2005

Journal of Elec Materi

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Low dielectric constant materials as interlayer dielectrics (ILDs) offer a way to reduce the RC time delay in high-performance ultra-large-scale integration (ULSI) circuits. Fluorocarbon films containing silicon have been developed for interlayer applications below 50-nm linewidth technology. The preparation of the films was carried out by plasma-enhanced chemical vapor deposition (PECVD) using gas precursors of tetrafluorocarbon as the source of active species and disilane (5 vol.% in helium) as a reducing agent to control the ratio of F/C in the films. The basic properties of the low dielectric constant (low-k) interlayer dielectric films are studied as a function of the fabrication process parameters. The electrical, mechanical, chemical, and thermal properties were evaluated including dielectric constant, surface planarity, hardness, residual stress, chemical bond structure, and shrinkage upon heat treatments. The deposition process conditions were optimized for film thermal stability while maintaining a relative dielectric value as low as 2.0. The average breakdown field strength was 4.74 MV/cm. The optical energy gap was in the range 2.2-2.4 eV. The hardness and residual stress in the optimized processed SiCF films were, respectively, measured to be in the range 1.4-1.78 GPa and in the range 11.6-23.2 MPa of compressive stress.

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“…Hence, a -C:H films are expected to be applied to devices such as solar cells and thin-film transistors (TFT) [ 13 ]. Fundamental research focused on the electrical conduction mechanism in a -C:H films was conducted by Fabisiak et al [ 25 ]. They showed that the temperature dependence of the electrical conductivity of a -C:H films indicate thermally activated band conduction at high temperatures and variable-range hopping (VRH) conduction at low temperatures [ 25 ].…”

Section: Introductionmentioning

confidence: 99%

Electrical Conduction Properties of Hydrogenated Amorphous Carbon Films with Different Structures

et al. 2021

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Hydrogenated amorphous carbon (a-C:H) films have optical and electrical properties that vary widely depending on deposition conditions; however, the electrical conduction mechanism, which is dependent on the film structure, has not yet been fully revealed. To understand the relationship between the film structure and electrical conduction mechanism, three types of a-C:H films were prepared and their film structures and electrical properties were evaluated. The sp2/(sp2 + sp3) ratios were measured by a near-edge X-ray absorption fine structure technique. From the conductivity–temperature relationship, variable-range hopping (VRH) conduction was shown to be the dominant conduction mechanism at low temperatures, and the electrical conduction mechanism changed at a transition temperature from VRH conduction to thermally activated band conduction. On the basis of structural analyses, a model of the microstructure of a-C:H that consists of sp2 and sp3-bonded carbon clusters, hydrogen atoms and dangling bonds was built. Furthermore, it is explained how several electrical conduction parameters are affected by the carrier transportation path among the clusters.

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RF Plasma deposited amorphous carbon films Electronic and optical properties

Cited by 21 publications

References 15 publications

Photoluminescence of RF Glow Discharge Amorphous Carbon Films

Photoluminescence of RF Glow Discharge Amorphous Carbon Films

Ultralow-k silicon containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

Electrical Conduction Properties of Hydrogenated Amorphous Carbon Films with Different Structures

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