RF magnetron sputtered indium tin oxide films with high transmittance and work function for a-Si:H/c-Si heterojunction solar cells

Hussain, Shahzada Qamar; Oh, Woong-Kyo; Ahn, Shihyun; Le, Anh Huy Tuan; Kim, Sunbo; Lee, Youngseok; Yi, Junsin

doi:10.1016/j.vacuum.2013.07.004

Cited by 38 publications

(18 citation statements)

References 22 publications

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“…2(b). The average optical transmittance in the 400-1100 nm wavelength range was between 90% and 95% for the different areas of graphene film, which was higher than the average optical transmittance of ITO films (80% to 90%) reported previously [25][26][27][28]. Fig.…”

Section: Characterization Of Graphenementioning

confidence: 50%

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Study on temperature-dependent carrier transport for bilayer graphene

Liu

et al. 2015

Physica E: Low-dimensional Systems and Nanostructures

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Section: Characterization Of Graphenementioning

confidence: 50%

“…(1)-(4), we could calculate that the sheet resistance (R s ) of the graphene film was 1096.20 Ω/sq (the corresponding resistivity was 7.45 Â 10 À 5 Ω cm), which was lower than the resistivity of ITO films (10 À 4 Ω cm to 10 À 2 Ω cm) reported previously [25][26][27][28].…”

Section: Room Temperature Transport Measurementsmentioning

confidence: 64%

Study on temperature-dependent carrier transport for bilayer graphene

Liu

et al. 2015

Physica E: Low-dimensional Systems and Nanostructures

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“…Bare Eagle glass showed 92% transmittance in the visible wavelength (400~800) nm region. All the ITO films showed more than 85% transmittance in the vis-NIR (400~1,100) nm wavelength region [1][2][3][4][5]20] …”

Section: Resultsmentioning

confidence: 99%

“…The electrical and mechanical properties of ITO films need to be improved for future highly efficient and high-quality large area SHJ solar cell applications. The mechanical properties of IT films such as internal stress and adhesion are closely associated with the microstructure and deposition process conditions [5,6].…”

Section: Introductionmentioning

confidence: 99%

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Kang¹,

Le²,

Park³

et al. 2016

Transactions on Electrical and Electronic Materials

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The mechanical properties of ITO films such as adhesion and internal stress are very important for the commercial application of solar cell devices. We report high quality pulsed DC magnetron sputtered ITO films deposited on silicon and glass substrates with low resistivity and high transmittance for various working pressures ranging from 0.96 to 3.0 mTorr. ITO films showed the lowest resistivity of 2.68×10 -4 Ω·cm, high hall mobility of 46.89 cm 2 /V.s, and high transmittance (>85%) for the ITO films deposited at a low working pressure of 0.99 mTorr. The ITO films deposited at a low working (0.96 mTorr) pressure had both amorphous and polycrystalline structures and were found to have compressive stress while the ITO films deposited at higher temperature than 0.99 mTorr was mixture of amorphous and polycrystalline and was found to have tensile stress.

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“…The most important parameters of a high‐quality ITO film are the electrical resistivity and optical transmittance. ITO films are deposited via various techniques including spray pyrolysis , the sol–gel method , pulsed laser deposition , and magnetron sputtering . Among the various techniques, magnetron sputtering has certain advantages such as high deposition rates, low deposition pressures, high‐quality films, greater adherence, better uniformity over large areas, and low substrate temperature during deposition.…”

Section: Introductionmentioning

confidence: 99%

Role of sputtering power on the microstructural and electro‐optical properties of ITO thin films deposited using DC sputtering technique

Kosarian

Shakiba

Farshidi

2017

IEEJ Transactions Elec Engng

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The effects of sputtering power on the deposition rate as well as the microstructural, electrical, and optical properties of indium tin oxide (ITO) thin films are investigated in this paper. ITO thin films were deposited on glass substrates using direct current (DC) magnetron sputtering of different DC powers, ranging from 60 to 140 W, onto externally unheated glass substrates. All samples were grown at the minimum sustainable plasma pressure to reduce the destructive role of pressure. The microstructural, electrical, and optical properties of the sputtered ITO films were systematically characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), four-probe electrical conductivity, and optical spectroscopy. XRD studies confirmed the cubic bixbyite ITO structure, and the main preferred orientations of the prepared thin films were (222), (400), (440), and (622). AFM analysis showed a minimum surface roughness of 1.37 nm for the films deposited at 140 W, while the average size of the grains was 65 ± 5 nm. The deposition time was fixed at 10 min for all samples, and the AFM characterization of the films showed 170, 230, and 250 nm thickness for the samples deposited at 60, 100 and 140 W, respectively. From the variations of the sheet resistance and the XRD patterns of the ITO thin films, it was concluded that, as the ratio I 222 /I 400 of a sample approaches unity, the sheet resistance of the layer reduces. A minimum sheet resistance 16 /square, transmittance 85% with the thickness of 230 nm, and optical bandgap 4.09 eV were found for the thin film grown on the externally unheated substrates at 100 W DC power and 32 mTorr working pressure.

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RF magnetron sputtered indium tin oxide films with high transmittance and work function for a-Si:H/c-Si heterojunction solar cells

Cited by 38 publications

References 22 publications

Study on temperature-dependent carrier transport for bilayer graphene

Study on temperature-dependent carrier transport for bilayer graphene

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Role of sputtering power on the microstructural and electro‐optical properties of ITO thin films deposited using DC sputtering technique

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