RF extraction of self-heating effects in FinFETs of various geometries

Makovejev, Sergej; Olsen, SH; Raskin, Jean‐Pierre

doi:10.1109/sirf.2011.5719331

Cited by 7 publications

(7 citation statements)

References 10 publications

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“…N‐channel MOSFETs with gate lengths L g ranging from 30 to 100 nm, finger width W f = 250 nm, and number of parallel fingers N f = 80 were characterized. Threshold voltages, V th , extracted in the linear regime at a drain voltage V d = 20 mV were shown to be ~0.38–0.4 V .…”

Section: Self‐heating Effectsmentioning

confidence: 97%

“…In the case of FinFETs, the reduction of fin width, and consequently effective width, results in a higher surface‐to‐volume ratio and different effects on thermal resistance (associated with device surface) and thermal capacitance (associated with Si volume). In , it has been demonstrated that there is a decrease of the thermal time constant with a reduction of the fin width. The thermal time constant is around 80 ns for the narrowest fins (12 nm).…”

Section: Self‐heating Effectsmentioning

confidence: 99%

“…However, analysis of the thermal properties in is not supported by experimental results and is entirely based on numerical simulations that require certain assumptions about heat conduction paths, device symmetries, and boundary conditions. Experimental work on self‐heating in FinFETs and UTBBs was carried out, respectively in and in . RF measurements at frequencies up to a few GHz were combined with numerical simulations.…”

Section: Self‐heating Effectsmentioning

confidence: 99%

“…Output conductance as function of frequency obtained with different instruments. FinFETs with W fin = 22 nm, S fin = 328 nm, N fin = 10, and L g = 40 nm, and V g = V d = 1 V .…”

Section: Self‐heating Effectsmentioning

confidence: 99%

“…Therefore, extraction of thermal properties must be performed well above 10 MHz where FinFET characteristics are isothermal. In order to investigate the impact of FinFET geometry on self‐heating effects, output conductance and total drain capacitance values were extracted for FinFETs of different fin widths, numbers of parallel fins, and fin spacings in . In summary, an increase of the fin width and the number of parallel fins lead to improved thermal properties of the devices; however, it compromises integration density.…”

Section: Self‐heating Effectsmentioning

confidence: 99%

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Silicon‐on‐insulator MOSFETs models in analog/RF domain

Raskin

2013

Int J Numerical Modelling

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SUMMARYSeveral physical phenomena specific to silicon-on-insulator metal-oxide-semiconductor field-effect transistors, such as floating body effects, self-heating, and substrate coupling, are described and modeled. Small-signal equivalent circuit of ultra-thin body and thin buried oxide and fin field effect transistor (FinFET) are extracted, and their radio frequency figures of merit as well as their advantages and limitations are presented. We demonstrate the importance of performing wideband characterization at the early stage of the technology development in order to identify the device weaknesses and come up with technological solutions to overcome those. With the ongoing downscaling of the metal-oxide-semiconductor devices, the surrounding of the transistor, that is, the contacts, the access lines, and the substrate, starts to play a major role on the transistor behavior. There is an urgent need to develop adequate models for the new generation of devices valid over a wide frequency band.

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Section: Self‐heating Effectsmentioning

confidence: 97%

Section: Self‐heating Effectsmentioning

confidence: 99%

Section: Self‐heating Effectsmentioning

confidence: 99%

“…Output conductance as function of frequency obtained with different instruments. FinFETs with W fin = 22 nm, S fin = 328 nm, N fin = 10, and L g = 40 nm, and V g = V d = 1 V .…”

Section: Self‐heating Effectsmentioning

confidence: 99%

Section: Self‐heating Effectsmentioning

confidence: 99%

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Silicon‐on‐insulator MOSFETs models in analog/RF domain

Raskin

2013

Int J Numerical Modelling

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A novel method to dynamic thermal impedance and channel temperature extraction of GaN HEMTs

Wang¹,

Zhou

et al. 2019

Int J Numerical Modelling

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An improved method to extract dynamic thermal impedance for power transistor is proposed, and the nonlinear thermal effect is considered. A novel model to characterize transistor dynamic thermal impedance is established. A four-node R-L network is attached in model to characterize self-heating. And the method to extract model parameters is given. A constant m is defined to judge the change of thermal impedance with temperature. Thermal impedance Z th can be solved through rigorous mathematical calculation. This model is validated by using an AlGaN/GaN HEMT device under different measurement conditions, which demonstrates its potential to characterize the complete dynamic self-heating behaviors for power transistors. KEYWORDS channel temperature, dynamics thermal impedance, GaN HEMTs, self-heating effect Int J Numer Model. 2019;e2599.wileyonlinelibrary.com/journal/jnm

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