RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Wu, Lishu; Dai, Jiayun; Kong, Yuechan; Chen, Tangsheng; Zhang, Tong

doi:10.1088/1674-4926/43/9/092601

Cited by 2 publications

(1 citation statement)

References 30 publications

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“…With the rise of human-machine interaction [1,2], intelligent robotics [3,4], and wearable health monitoring electronics [5][6][7], flexible pressure sensors and electronic skins (e-skins) have attracted more and more attention in the last two * Authors to whom any correspondence should be addressed. decades.…”

Section: Introductionmentioning

confidence: 99%

Ti₃C₂T _x quantum dots/leaf veins based sensors with ultra-broadrange high sensitivity

Zheng,

Xu,

Lou

et al. 2023

J. Phys. D: Appl. Phys.

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Flexible pressure sensors and electronic skins have attracted more and more attention in human-machine interaction, intelligent robotics, and wearable health monitoring electronics. However, it is still challenging to tradeoff between high sensitivity and a wide working range to meet a variety of pressure applications. Herein, we reported a flexible biomimic pressure sensor assembled by a simple and cost-effective approach using self-assembling Ti3C2Tx quantum dots on leaf veins. Due to the ultrahigh specific surface area, excellent electrical conductivity, and hierarchical micro-network structure, the device shows excellent sensitivity (25.83 kPa−1), a wide working range (0.1-1500 kPa), remarkable high-pressure resolution (5 kPa under high pressure of 100 kPa or 5%), high stability (over 4000 cycles) and fast response time (<0.3 s). Furthermore, we demonstrated the applications of body motion monitoring during different parts and activities. The results prove our device is a potential candidate for next-generation wearable electronics and human-machine interaction.

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Section: Introductionmentioning

confidence: 99%

Ti₃C₂T _x quantum dots/leaf veins based sensors with ultra-broadrange high sensitivity

Zheng,

Xu,

Lou

et al. 2023

J. Phys. D: Appl. Phys.

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Junction Piezotronic Transistor Arrays Based on Patterned ZnO Nanowires for High-Resolution Tactile and Photo Mapping

Zhang,

Zhou,

et al. 2024

Sensors

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Recently, a great deal of interest has been focused on developing sensors that can measure both pressure and light. However, traditional sensors are difficult to integrate into silicon (Si)-based integrated circuits. Therefore, it is particularly important to design a sensor that operates on a new principle. In this paper, junction piezotronic transistor (JPT) arrays based on zinc oxide (ZnO) nanowire are demonstrated. And the JPT arrays show high spatial resolution pressure and light mapping with 195 dpi. Because ZnO nanowires are arranged vertically above the p-type Si channel’s center of the transistor, the width of the heterojunction depletion region is constricted by the positive piezoelectric potential generated by strained ZnO. In addition, photogenerated charge carriers can be created in the Si channel when JPT is stimulated by light, which increases its electrical conductivity. Consequently, the external pressure and light distribution information can be obtained from the variation in the output current of the device. The prepared JPT arrays can be compatible with Si transistors, which make them highly competitive and make it possible to incorporate both pressure and light sensors into large integrated circuits. This work will contribute to many applications, such as intelligent clothing, human–computer interaction, and electronic skin.

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RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Cited by 2 publications

References 30 publications

Ti₃C₂T _x quantum dots/leaf veins based sensors with ultra-broadrange high sensitivity

Ti₃C₂T _x quantum dots/leaf veins based sensors with ultra-broadrange high sensitivity

Junction Piezotronic Transistor Arrays Based on Patterned ZnO Nanowires for High-Resolution Tactile and Photo Mapping

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RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Cited by 2 publications

References 30 publications

Ti3C2T x quantum dots/leaf veins based sensors with ultra-broadrange high sensitivity

Ti3C2T x quantum dots/leaf veins based sensors with ultra-broadrange high sensitivity

Junction Piezotronic Transistor Arrays Based on Patterned ZnO Nanowires for High-Resolution Tactile and Photo Mapping

Contact Info

Product

Resources

About

Ti₃C₂T _x quantum dots/leaf veins based sensors with ultra-broadrange high sensitivity

Ti₃C₂T _x quantum dots/leaf veins based sensors with ultra-broadrange high sensitivity