2003
DOI: 10.1109/led.2002.807016
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RF capacitance-voltage characterization of MOSFETs with high leakage dielectrics

Abstract: We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm ¾. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion and inversion.

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Cited by 67 publications
(61 citation statements)
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References 10 publications
(11 reference statements)
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“…Two-port S-parameter measurements were carried out on these test structures between 50 MHz and 2 GHz, following SOLT calibration and open-short deembedding routines as previously described e.g. in [4]). The capacitance was computed from Y gg using a three-element equivalent circuit and employing a twofrequency technique [14,15] (at 100 and 200 MHz) to correct for series resistance and gate leakage.…”
Section: Resultsmentioning
confidence: 99%
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“…Two-port S-parameter measurements were carried out on these test structures between 50 MHz and 2 GHz, following SOLT calibration and open-short deembedding routines as previously described e.g. in [4]). The capacitance was computed from Y gg using a three-element equivalent circuit and employing a twofrequency technique [14,15] (at 100 and 200 MHz) to correct for series resistance and gate leakage.…”
Section: Resultsmentioning
confidence: 99%
“…The connection of gate, source, drain and well are discussed in many previous publications (see e.g. [4,7] The gate resistance of such a structure with silicided polysilicon gates was shown to be [10] Referring to ref. [10] resistance between the contact and the transistor edge is considerably smaller than the resistance to the center of the gate finger, the distributed nature of this sheet resistance leads to an effective average resistance which is a factor 3 lower than the overall dc resistance [11].…”
Section: Low Series Resistance Designmentioning
confidence: 99%
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“…For CMOS, RF-CV [3], or more precisely, C-V measured at 10-1000 MHz, is becoming the de-facto standard. This approach combines high frequency impedance measurement (using LCR meters or Vector Network Analyzers (VNAs)), RF probing, and calibration and de-embedding of some sort.…”
Section: Introductionmentioning
confidence: 99%
“…A ZVB20 network analyzer [118] is used for 1-port RF C-V measurements. Open/short/load calibration is carried out on a standard calibration pattern.…”
Section: Measurement Principles and Experimentsmentioning
confidence: 99%