Rewritable resistive memory effect in poly[N-(3-(9H-carbazol-9-yl)propyl)-methacrylamide] memristor

Abstract

A new polymer with charge transporting carbazole groups combines the flexibility of the side chains with their structural stabilization enforced by physical crosslinking. It yields the polymer nonvolatile rewritable resistive memory properties.

Synapse-Mimicking Memristors Based on 3,6-Di(tpy)-9-Phenylcarbazole Unimer and Its Copolymer with Cobalt(II) Ions

“…A slope of 2 is typical for the space-charge-limited current (SCLC) in trap-free conditions or in a semiconductor with shallow traps, which can be described by Child’s law [ 54 ]: where is the relative permittivity of U , ε 0 is the permittivity of free space, μ is the effective charge carrier mobility that also counts for the shallow traps, and d is the thickness of the active layer. The steep increase at the V SET voltage could be explained by shifting the quasi-Fermi level above the energy level of traps that become filled and no longer influence the charge transport, switching the device to its ON-state [ 55 , 56 ]. The opposite polarity of voltage removes the charges from the localized trapping states, resetting the device to its OFF-state.…”

“…The I–V analysis of the ITO/ U /Al device showed the presence of a space charge in the device set to the ON-state. The trapping/detrapping process can be influenced by the dipole reorganizations at the injection barriers [ 55 ].…”