Reviewing recent developments in the acid ammonothermal crystal growth of gallium nitride

Ehrentraut, Dirk; Kagamitani, Yuji; Fukuda, Tsuguo; Orito, Fumio; Kawabata, Shinichiro; Katano, Kizuku; Terada, Shin

doi:10.1016/j.jcrysgro.2008.06.017

Cited by 50 publications

(45 citation statements)

References 24 publications

(39 reference statements)

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“…Samples were grown on p-type Si (111) substrates, employing GaN powder (99.99% purity) and NH 4 OH as precursors, all of them contained inside a graphite cell. The scheme of the graphite cell is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…The holder has a volume of ~0.27 cm 3 that can contain a mixture of GaN powder (~150 mg) and NH 4 OH, close to the substrate surface (< 1 mm). The samples are labeled according to the NH 4 OH amount employed, considering that each drop has a volume ~0.05 ml, the corresponding labels are presented in Table 1.…”

Section: Structural Morphology and Chemical Analysismentioning

confidence: 99%

“…Therefore we assume that the top layers on the surface correspond to a β-Ga 2 O 3 phase, while the inner layers beneath the surface are GaN. The increase of NH 4 OH modifies the growth kinetics, implying a different surface morphology. The EDS results indicate a higher concentration of nitrogen in this sample, corresponding to XRD results.…”

Section: Photoluminescencementioning

confidence: 99%

“…However, these methods employed polycrystalline GaN as seeds in order to grow the material. Other specific growth parameters related to this method are, high ammonia (NH 3 ) pressure in the system (between 150-500 MPa), temperature in the range of 500-600 °C and a long growth time that could take several hours [2][3][4][5][6][7][8] . Optimization of the system in order to improve the growth rate and purity are in progress [9][10][11] .…”

Section: Introductionmentioning

confidence: 99%

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Synthesis of Gallium Nitride and Related Oxides Via Ammonobasic Reactive Sublimation (ARS)

et al. 2017

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Ammonobasic reactive sublimation (ARS) is proposed as a novel method to synthesize GaN and related oxides. Results indicate that GaN growth occurs by a nitriding process of Ga and related oxides, establishing a direct dependence on NH 4 OH amount added as a primary chemical reactive. The samples were grown on p-type Si (111) substrates inside a tube furnace, employing GaN powder and NH 4 OH. The characterizations of the samples were carried out by XRD, SEM, EDS and PL techniques, revealing the influence of NH 4 OH on the improvement of GaN synthesis and the enhancement of its optical and structural properties.

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Section: Methodsmentioning

confidence: 99%

Section: Structural Morphology and Chemical Analysismentioning

confidence: 99%

Section: Photoluminescencementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Synthesis of Gallium Nitride and Related Oxides Via Ammonobasic Reactive Sublimation (ARS)

et al. 2017

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“…Various research groups and companies are actively pursuing this technique and 2-inch diameter crystal boules have already been demonstrated. [24][25][26][27] The current state of the art crystals have a reproducible low TD densities of around 10 4 cm −2 [26][27][28][29] and wafers sliced from ammonothermally grown boules are sufficiently flat with radius of curvature in the order of several hundred meters. [20,30,31] Typical growth rates in the c-direction are in the range of a few hundred micrometers per day [22,26,32,33] and large arbitrary oriented substrates have been demonstrated.…”

Section: Progress Reportmentioning

confidence: 99%

Defects in Single Crystalline Ammonothermal Gallium Nitride

Suihkonen

Pimputkar

Sintonen

et al. 2017

Adv Elect Materials

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Native bulk gallium nitride (GaN) has emerged as an alternative for sapphire and silicon as a substrate material for III‐N devices. While quasi‐bulk GaN substrates are currently commercially available, single crystal GaN substrates are considered essential for future high performance light emitters and power devices. The ammonothermal method is currently considered one of the most feasible methods to grow large truly bulk crystals of GaN at low cost and high structural quality. High crystalline quality GaN substrates sliced from ammonothermally grown crystals have been demonstrated and utilized in homoepitaxy for III‐N devices. However, despite the high crystalline quality the properties of as‐grown ammonothermal GaN crystals and substrates are affected by the presence of impurities and other defects that hinder their use for device applications. Here, the main developments of ammonothermal growth of GaN and the effects of impurities, native point defects, and dislocations on the material properties are summarized. Additionally, measurement techniques that enable the evaluation of point defect concentration and low dislocation density distribution over a large area on bulk GaN substrates are reviewed.

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Corrosive Degeneration of Autoclaves for the Ammonothermal Synthesis: Experimental Approach and First Results

et al. 2014

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The ammonothermal growth of different bulk group III nitride materials enables cost-efficient production of high-quality single crystals. Despite its advantages this process is limited due to the corrosive ammonothermal environment. This environment consists of supercritical ammonia with acidic or basic additives at high temperatures and pressures in high-pressure cells made of a nickel-base alloy. As a consequence of corrosion, large amounts of metallic impurities are detectable in the grown crystals. The mechanisms of corrosion are not well understood. A method is presented to investigate corroded autoclaves, caused by the interaction with supercritical fluid, together with first results regarding the degeneration of autoclave material.

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Reviewing recent developments in the acid ammonothermal crystal growth of gallium nitride

Cited by 50 publications

References 24 publications

Synthesis of Gallium Nitride and Related Oxides Via Ammonobasic Reactive Sublimation (ARS)

Synthesis of Gallium Nitride and Related Oxides Via Ammonobasic Reactive Sublimation (ARS)

Defects in Single Crystalline Ammonothermal Gallium Nitride

Corrosive Degeneration of Autoclaves for the Ammonothermal Synthesis: Experimental Approach and First Results

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