Review: The effect of different nanofiller materials on the thermoelectric behavior of bismuth telluride

Interfacial effects in an inorganic/organic composite based on Bi2Te3inducing decoupled transport properties and enhanced thermoelectric performance

“…Some research groups have attempted to fabricate Bi 2 Te 3 nanostructures such as nanoparticles, 13–15 nanowires, 16–18 and nanoplatelets 19–21 or to introduce metallic and non-metallic nanoscale precipitates in Bi 2 Te 3 . 22–24 These attempts basically intend to induce lattice thermal conductivity reductions in Bi 2 Te 3 nanostructures or in Bi 2 Te 3 substances including nanoprecipitates. The reductions may result from phonon scattering in Bi 2 Te 3 nanograins and boundaries or phonon scattering in nanoprecipitates.…”

2D Materials for Wearable Energy Harvesting

“…[300][301][302] Due to its high figure of merit in bulk materials (ZT 1.14 at room temperature) and 2D nanostructures around room temperature (T < 250 °C), bismuth telluride (Bi 2 Te 3 ) has been widely researched in thermoelectric applications. [303,304] Bi 2 Te 3 is made of quintuple atomic layers with a repeated stacking pattern of Te-Bi-Te-Bi-Te along the c-axis, and each "monolayer" is stacked via weak van der Waals interaction (Figure 2e). [305][306][307][308] It has been predicted and measured that by lowering the thickness of Bi 2 Te 3 from bulk to a few layers, a 13-fold increase in figure of merit can be attained compared to the bulk counterpart due to the lower thermal conductivity and increased electrical conductivity.…”

A Review on Doped/Composite Bismuth Chalcogenide Compounds for Thermoelectric Device Applications: Various Synthesis Techniques and Challenges

“…The increase in the composition of Bi 2 Te 3 in Bi-Sb-Te lowers the concentration of holes systematically with the highest ZT, which was found to be 1.14 at 350 K. 145 High-energy ball milling was carried out for n-type Bi 2 Te 3 bulk compound followed by spark plasma sintering, which contributed to the uniformity of the grains and grain boundaries in the materials, thus resulting in increased thermoelectric properties with the highest ZT value of 1.2 at 480 K. 146 The parallel and perpendicular directions of electrical resistivity of the reduced of pretreated powder were found to decrease by 25% and 15%, respectively, as compared to dry powder samples. There was also an enhancement of Seebeck coefficient by 115% at room temperature for reduced pretreated powder in the perpendicular direction compared to dry powder sample, with a ZT of 0.1 at 500 K. 147 In order to investigate the effect of graphene nanoparticle structural integrity on the thermoelectric properties, Bi 2 Te 2.7 Se 0.3 /graphene composites were prepared by Faraha et al 148 through ball milling and spark plasma sintering techniques. The electrical conductivity of samples with higher graphene concentration was found to be low due to the agglomeration and increased scattering of charge carriers.…”