Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics
Yuan Xiao Ma,
Hui Su,
Wing Man Tang
et al.
Abstract:One main obstacle to obtaining high carrier mobility in transistors with metal-oxide-semiconductor (MOS) structures is carrier scattering, which has been systematically investigated. In the past few decades, much attention was preferentially paid to the scatterings arising from the region near the semiconductor/oxide interface because they can affect the carrier transport in the semiconductor channel more directly and effectively, e.g., polaronic effect, Coulomb scattering, surface-roughness scattering, and in… Show more
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