Review on magnetic/nonmagnetic heterojunction interface effects on spintronic MTJ devices
Yuhai Yuan,
Yanfeng Jiang
Abstract:Magnetic tunnel junctions (MTJs), as the core storage unit of magneto resistive random-access memory (MRAM), have received a lot of attention and have a very important position in spintronics. In the MTJ devices, magnetic/nonmagnetic heterojunction structures are included, consisting of magnetic metals and magnetic insulators or nonmagnetic metals. The interface of the heterojunction has certain physical effects that can affect the performance of MTJ devices. In the review, combined with the existing research … Show more
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