Review on graphene spintronic, new land for discovery

Kheirabadi, Narjes; Shafiekhani, Azizollah; Fathipour, Morteza

doi:10.1016/j.spmi.2014.06.020

Cited by 43 publications

(29 citation statements)

References 160 publications

(283 reference statements)

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“…Two-dimensional (2D) hexagonal crystals such as graphene, silicene, germanene, and stanene has been considered as a preeminent candidate for spintronic systems [14][15][16][17]. Graphene has high electron mobility [18,19] and long spin relaxation lifetime [20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Antiferromagnetic spin valve based on a heterostructure of two-dimensional hexagonal crystals

Luo

2019

Phys. Rev. B

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Spin valves consisting of heterostructures of single-layer hexagonal crystal on an antiferromagnetic substrate or of bilayer hexagonal crystal intercalated between two (anti)ferromagnetic insulators, with the current-in-plane geometry, are proposed. The two-dimensional hexagonal crystals such as graphene, silicene, germanene, and stanene are modeled by the tight binding model of honeycomb lattice. The magnetization orientation of the antiferromagnetic substrate(s) controls the band gap and topological properties of bulk, which in turn control the transport of three types of spin valve geometries: (i) the in-plane transport of bulk; (ii) the transport of topological edge states along nanoribbon with bulk gap; (iii) the transport of chiral edge state along domain wall. The heterostructures are investigated by a tight binding model with an (anti)ferromagnetic exchange field, Hubbard interaction and(or) spin-orbital coupling. For the first type of spin valve geometry, the Hubbard interaction could enlarged the effective band gap of bulk, which in turn improve the sensitivity of the spin valves to the antiferromagnetic exchange field. For the second and third types of spin valve geometries, the topological phase diagrams of varying types of heterostructures with spin-orbital coupling serve as guideline for designing the spin valve. The coexistence of the Hubbard interaction and the spin-orbital coupling could enlarge the topological gap in bulk and improve the quality of the chiral edge states at the domain walls between regions with different topological numbers.

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Section: Introductionmentioning

confidence: 99%

Antiferromagnetic spin valve based on a heterostructure of two-dimensional hexagonal crystals

Luo

2019

Phys. Rev. B

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“…For the applications in nanoscale integrated circuits, low-dimensional spintronic materials with high Curie temperature (T C ) are much more desirable [11][12][13][14][15]. To achieve this purpose, 2D metal-free materials, due to their long diffusion lengths and spin-relaxation time arising from the weak spin-orbit and hyperfine interaction, are gaining increasing interest recently [7,[16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

B₄CN₃and B₃CN₄monolayers as the promising candidates for metal-free spintronic materials

et al. 2016

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The search for candidates of spintronic materials, especially among the two-dimensional (2D) materials, has attracted tremendous attentions over the past decades. By using a particle swarm optimization structure searching method combined with density functional calculations, two kinds of boron carbonitride monolayer structures (B 4 CN 3 and B 3 CN 4 ) are proposed and confirmed to be dynamically and kinetically stable. Intriguingly, we demonstrate that the magnetic ground states of the two B x C y N z systems are ferromagnetic ordering with a high Curie temperature of respectively 337 K for B 4 CN 3 and 309 K for B 3 CN 4 . Furthermore, based on their respective band structures, the B 4 CN 3 is found to be a bipolar magnetic semiconductor (BMS), while the B 3 CN 4 is identified to be a type of spin gapless semiconductor (SGS), both of which are potential spintronic materials. In particular, carrier doping in the B 4 CN 3 can induce a transition from BMS to half-metal, and its spin polarization direction is switchable depending on the doped carrier type. The BMS property of B 4 CN 3 is very robust under an external strain or even a strong electric field. By contrast, as a SGS, the electronic structure of B 3 CN 4 is relatively sensitive to external influences. Our findings successfully disclose two promising materials toward 2D metal-free spintronic applications.

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“…The vast potential for applications lies in the extraordinary properties of nanostructures compared to traditional materials, such as high mechanical strength, extrusive electronic conductivity and outstanding thermal conductivity, etc. [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Buckling analysis of graphene sheets embedded in an elastic medium based on the kp-Ritz method and non-local elasticity theory

Zhang

Liew

et al. 2016

Engineering Analysis with Boundary Elements

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Review on graphene spintronic, new land for discovery

Cited by 43 publications

References 160 publications

Antiferromagnetic spin valve based on a heterostructure of two-dimensional hexagonal crystals

Antiferromagnetic spin valve based on a heterostructure of two-dimensional hexagonal crystals

B₄CN₃and B₃CN₄monolayers as the promising candidates for metal-free spintronic materials

Buckling analysis of graphene sheets embedded in an elastic medium based on the kp-Ritz method and non-local elasticity theory

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Review on graphene spintronic, new land for discovery

Cited by 43 publications

References 160 publications

Antiferromagnetic spin valve based on a heterostructure of two-dimensional hexagonal crystals

Antiferromagnetic spin valve based on a heterostructure of two-dimensional hexagonal crystals

B4CN3and B3CN4monolayers as the promising candidates for metal-free spintronic materials

Buckling analysis of graphene sheets embedded in an elastic medium based on the kp-Ritz method and non-local elasticity theory

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B₄CN₃and B₃CN₄monolayers as the promising candidates for metal-free spintronic materials