Review on GaAsSb nanowire potentials for future 1D heterostructures: Properties and applications

Controlling the morphology and wavelength of self-assembled coaxial GaAs/Ga(As)Sb/GaAs single quantum-well nanowires

“…[30][31][32] Furthermore, most of the researchers have focused on the control of the growth of GaAsSb QW NWs and device performance. 28,29,33 However, the control of the morphology of GaAsSb core-shell or quantum well NWs and the analysis of their growth mechanisms have not been fully reported.…”

GaAs/GaAsSb Core–Shell Configured Nanowire-Based Avalanche Photodiodes up to 1.3 μm Light Detection

“…This paper explores a self-catalyzed, epitaxially grown GaAs/GaAsSb CS-based NW separate absorption, charge control, and multiplication region (SACM) APD for near-infrared (NIR) photodetection. GaAs and GaAsSb material systems in an NW configuration having a single group III element have the advantage of a broader growth window due to the high vapor pressure group V species impinging on the droplet predominantly responsible for the growth, in comparison to the multiple group III material systems with widely different diffusion lengths. , Furthermore, self-catalyzed GaAsSb NWs have the advantage of phase purity exhibiting only zinc-blende (ZB) crystal structure essentially free of planar defects , as opposed to polytypism in competitive InGaAs NW counterpart. , Additionally, a CS architecture enables better passivation and shielding of the active junction from surface disorder and provides a better pathway for strain relaxation, particularly in highly lattice-mismatched heteroepitaxial layers than their axial counterparts . Also, CS-configured NWs offer increased device sensitivity due to the decoupling of vertical light absorption and radial carrier generation .…”

“…37 However, Sb-deficit regions at the tips and interfaces and inhomogeneous composition distribution with a spontaneous CS structure 35 are some of the issues of this material system. Despite these problems, large carrier mobilities 28 and large spin−orbit coupling 36 with superior absorption properties 28,37 in the telecommunication wavelength region, along with exceptional crystal phase purity, add tremendous value to photodetection applications.…”

MBE-Grown Hybrid Axial Core–Shell n-i-p GaAsSb Heterojunction Ensemble Nanowire-Based Near-Infrared Photodetectors up to 1.5 μm

“…Another material system that has been explored in this region is InAs IRPD; however, high detectivity of over 10 13 Jones is yet to be reported . In addition, GaAsSb offers superior carrier mobility; longer electron lifetime; suppressed auger recombination; less dependence of the electronic structure on its alloy due to the presence of a single group-III element; in NW configuration, superior crystal quality offered by the surfactant nature of Sb; and bandgap tuning . Hence, these features make GaAsSb a better material option for further improving the IRPD device performance.…”

“…In the last decade, infrared photodetectors (IRPDs) have been extensively studied due to their rapidly expanding broad spectrum of application fields from defense to civilians, namely, nondestructive process control, earth observation, medical imaging, industry defect imaging, light detection, and ranging (LIDAR) scanning system for autonomous vehicles and exoplanet exploration defense and security (military missile tracking and laser warning detectors). 1 Among the range of zero-dimensional (0D) and onedimensional (1D) near-infrared photodetector (NIRPD) nanostructures, namely, axial and core−shell (C−S) nanowires (NWs), 2,3 quantum well, 4 quantum dot, 5 quantum wire, 6 quantum dash, 7 nanopillars, 8 nanorods, 9,10 and nanotubes, 11 which have been demonstrated, the interest has shifted more toward III−V-based semiconductor NWs owing to their superior characteristics, such as high absorption coefficient, high carrier mobility, direct and widely tunable bandgap, ease of heterostructure formation, and bandgap engineering. Further, the one-dimensional (1D) geometry of NW enables monolithic integration of III−V semiconductor-based photonic devices on the Si platform, which boosts the bandwidth of the light communication and also provides low-cost CMOS technology.…”