information is stored in the polarization orientation. A recent resurgence of interest in electronic properties of ferroelectrics, such as polarization controlled tunneling and conductivity of domain walls, potentially enables a new generation of applications utilizing resistive probes of polarization state, such as synaptic junctions, [1][2][3][4][5] domain-wall resistors, and domain-wall logic. [6][7][8][9] At the same time, ferroelectric control over resistive switching may enable neuromorphic devices without structural phase change and filamentary breakdown, potentially leading to much higher energy efficiency.One of the key properties enabling the coupling of ferroelectric and resistive switching is the electronic conductivity of domain walls, [10] which was experimentally demonstrated in numerous materials, [11][12][13][14] beginning with the work of Seidel et al. [15] The intrinsic coupling of domain walls to applied electric field, their nanoscale dimensions, and the flexibility afforded by deterministic control of ferroelectric, ferroelastic, and ferromagnetic structures containing conducting domain walls [16][17][18][19][20] provide great promise for new memory and electronics-engineering concepts, such as racetrack memories [21] or magnetoelectric spin-orbit devices. [22] A notable challenge on the path of ferroresistive switching is that metallic conductivity and ferroelectricity are fundamentally Ferroelectric materials exhibit spontaneous polarization that can be switched by electric field. Beyond traditional applications as nonvolatile capacitive elements, the interplay between polarization and electronic transport in ferroelectric thin films has enabled a path to neuromorphic device applications involving resistive switching. A fundamental challenge, however, is that finite electronic conductivity may introduce considerable power dissipation and perhaps destabilize ferroelectricity itself. Here, tunable microwave frequency electronic response of domain walls injected into ferroelectric lead zirconate titanate (PbZr 0.2 Ti 0.8 O 3 ) on the level of a single nanodomain is revealed. Tunable microwave response is detected through first-order reversal curve spectroscopy combined with scanning microwave impedance microscopy measurements taken near 3 GHz. Contributions of film interfaces to the measured AC conduction through subtractive milling, where the film exhibited improved conduction properties after removal of surface layers, are investigated. Using statistical analysis and finite element modeling, we inferred that the mechanism of tunable microwave conductance is the variable area of the domain wall in the switching volume. These observations open the possibilities for ferroelectric memristors or volatile resistive switches, localized to several tens of nanometers and operating according to well-defined dynamics under an applied field.