Review on different front surface modification of both n + -p-p + and p + -n-n + C- Si solar cell

Dasgupta, Kaustuv; Ray, Sudhabindu; Mondal, Anup; Gangopadhyay, Utpal

doi:10.1016/j.matpr.2017.10.086

Cited by 16 publications

(8 citation statements)

References 73 publications

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“…Recently semiconductor nanowires have attracted great attention due to their unique physical properties and potential applications in nanoelectronics, optoelectronics, and quantum electronics. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] With advances in the materials technology, highquality semiconductor nanowire have been obtained through, for instance, molecular-beam epitaxy, [18][19][20] metal-organic vapor phase epitaxy, [21][22][23] and chemical vapor deposition. [24][25][26][27][28][29] Due to their well organized crystal structures, relatively high carrier mobilities, small cross sections, and strong quantum confinement effects, III-V semiconductor nanowires have been employed to construct field-effect transistors, [30][31][32][33] infrared photodetectors, 34,35 light emission diodes, 36,37 thermal electrical devices, 38,39 laser devices, 40,41 solar cells, [42][43][44]…”

Section: Introductionmentioning

confidence: 99%

k.p theory of freestanding narrow band gap semiconductor nanowires

Luo

Liao

2016

AIP Advances

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We report on a theoretical study of the electronic structures of freestanding nanowires made from narrow band gap semiconductors GaSb, InSb and InAs. The nanowires are described by the eight-band k.p Hamiltonians and the band structures are computed by means of the finite element method in a mixture basis consisting of linear triangular elements inside the nanowires and constrained Hermite triangular elements near the boundaries. The nanowires with two crystallographic orientations, namely the [001] and [111] orientations, and with different cross-sectional shapes are considered. For each orientation, the nanowires of the three narrow band gap semiconductors are found to show qualitatively similar characteristics in the band structures. However, the nanowires oriented along the two different crystallographic directions are found to show different characteristics in the valence bands. In particular, it is found that all the conduction bands show simple, good parabolic dispersions in both the [001]- and [111]-oriented nanowires, while the top valence bands show double-maximum structures in the [001]-oriented nanowires, but single-maximum structures in the [111]-oriented nanowires. The wave functions and spinor distributions of the band states in these nanowires are also calculated. It is found that significant mixtures of electron and hole states appear in the bands of these narrow band gap semiconductor nanowires. The wave functions exhibit very different distribution patterns in the nanowires oriented along the [001] direction and the nanowires oriented along the [111] direction. It is also shown that single-band effective mass theory could not reproduce all the band state wave functions presented in this work.Comment: 17 pages, 19 figure

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Section: Introductionmentioning

confidence: 99%

k.p theory of freestanding narrow band gap semiconductor nanowires

Luo

Liao

2016

AIP Advances

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“…The absorption coefficient for SnO layer was considered from the experimental result reported by Liu et al [36] ( ) The photon flux data was fed to equation 24 from AM 1.5 irradiance standard data. R(λ) was taken from the micro textured surface reflectance data [37].…”

Section: Region Iii: Sno Layermentioning

confidence: 99%

Mathematical Modelling of a Novel Hetero-junction Dual SIS ZnO-Si-SnO Solar Cell

Dasgupta¹,

Gangopadhyay²,

Mondal

et al. 2021

Preprint

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For the last few decades scientists across the world have achieved significant improvement in performance of conventional silicon p-n junction solar cell. Sophisticated high temperature doping technology is unavoidable in the fabrication of these conventional solar cells. Back in 1970s scientists proposed an alternative solar cell technology with Schottky barrier which can cut down the burden on thermal budget of manufacturing process. Later the metal-semiconductor Schottky barrier further modified with hetero junction semiconductor-semiconductor solar cells. A thin intrinsic layer sandwiched between semiconductor-semiconductor junctions can repair the junction defect efficiently. These SIS solar cells became popular for its low thermal budget and considerable efficiency. In this paper we have tried to propose a mathematical model of a novel dual side SIS solar cell which is basically a multi junction solar cell. We have introduced a third semiconductor layer (SnO) at the back side of the cell which can provide an inversion layer much similar to PERT solar cell. This structure is first of its kind and thus a theoretical analysis is required before implementation. We have studied the effect of this back field on the performance of the cell and propose a mathematical model based on reciprocity theorem of charge collection. The efficiency of conventional ZnO-pSi SIS solar cell was computed ~ 5.2% while the back SnO p+ layer is expected to enhance the efficiency up to ~ 7.9% according to our mathematical model. We have concluded with significant mathematical justification to implement this structure with proposed electro-chemical experiments.

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“…texture of 3μm to 5μm created by conventional KOH-IPA alkaline etching method. The R(λ) data is extracted from the experimental graph of such texturization [19]. The absorption coefficient value of Si was taken from data published by Green et al [20].…”

Section: Collection Probability and Photo-generated Currentmentioning

confidence: 99%

Mathematical Modelling of a Novel Hetero-junction SIS Front Surface and Interdigitated Back Contact Solar Cell

Dasgupta¹,

Mondal

Ray

et al. 2021

Preprint

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In this paper we have proposed the design and fabrication of a novel hetero junction SIS front surface and interdigitated back contact solar cell. We have approximated the performance parameters and loss analysis of the proposed solar cell by using MATLAB software programming. Many groups of scientists have reported the experimental analysis of a-Si back contact interdigitated solar cell in different studies. Many silicon hetero junction solar cell design and results have been reported with some promising efficiency in last few decades. In this study a high life time(~2 ms) n-Si substrate was considered so that a sufficient amount of light generated career can reach to the interdigitated layer to get absorbed. The availability of the careers at the interdigitated back surface was further enhanced by considering and high-low junction at the front surface created by a ZnO n+ layer at the front surface. A very thin layer of thermally generated insulator SiO2 was considered in between ZnO and n-Si. This layer improves the detrimental effect of interface defects. This is the first time we have theorized interdigitated back contact (IBC) solar cell using metal oxide semiconductors layer deposition avoiding the expensive and complicated doping and diffusion process. In general a high concentration n+ layer is doped to create the high-low junction at front to accelerate the carriers to the back junctions. We are proposing a cost effective thermal deposition of SiO2 layer followed by sol-gel ZnO layer deposition which serves the same purpose of an n+ layer by introducing an SIS junction potential at front. The interdigitated back surface was designed with subsequent n+ a:Si and p+ a:Si vertical junctions.

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Review on different front surface modification of both n + -p-p + and p + -n-n + C- Si solar cell

Cited by 16 publications

References 73 publications

k.p theory of freestanding narrow band gap semiconductor nanowires

k.p theory of freestanding narrow band gap semiconductor nanowires

Mathematical Modelling of a Novel Hetero-junction Dual SIS ZnO-Si-SnO Solar Cell

Mathematical Modelling of a Novel Hetero-junction SIS Front Surface and Interdigitated Back Contact Solar Cell

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Review on different front surface modification of both n + -p-p + and p + -n-n + C- Si solar cell

Cited by 16 publications

References 73 publications

k.p theory of freestanding narrow band gap semiconductor nanowires

k.p theory of freestanding narrow band gap semiconductor nanowires

Mathematical Modelling of a Novel Hetero-junction Dual SIS ZnO-Si-SnO Solar Cell

Mathematical Modelling of a Novel Hetero-junction SIS&nbsp;Front Surface and Interdigitated Back Contact Solar Cell

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Mathematical Modelling of a Novel Hetero-junction SIS Front Surface and Interdigitated Back Contact Solar Cell