Direct evidences of oxygen doping control in single phase Bi 2 Sr 2 CaCu 2 O 8+δ (Bi-2212) whisker are reported, along with the changes in their structural properties obtained by varying the growth temperature of the synthesis process in the range from 843°C to 872°C. The as grown whiskers were investigated by means of X-Rays Powder Diffraction (XRPD), electrical transport measurements, Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDS). The XRPD measurements showed that the value of c-axis lattice parameter increases from 30.556Å to 30.640Å when increasing the growth temperature, which indicates different oxygen doping levels spanning from the slightly overdoped to the nearly optimally doped regimes. Such results are also confirmed by the electrical characterizations, which revealed a typical relationship among resistivity (ρ ab ), superconducting critical temperature (T c ), and caxis value. The growth of CuO crystals has also been identified during this study, with a maximum yield in the range 860°C-864°C, where also a slope change in the c-axis behaviour has been found, implying a possible correlation between the two phenomena. Therefore, by changing the synthesis growth temperature, one can provide an effective way for tuning the whisker electrical transport properties.