Review of wide band-gap technology: power device, gate driver, and converter design

Ravinchandra, Krishna; Freddy, Tan Kheng Suan; Lee, June-Seok; Lee, Kyo‐Beum; Mantooth, H. Alan; Thiruchelvam, Vinesh; Xian, Jerome Ignatius Yuen Yi

doi:10.1007/s43236-022-00470-6

Cited by 11 publications

(4 citation statements)

References 70 publications

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“…The advancement in the semiconductor technologies with the wide bandgap devices (GaN and SiC) provides new potentials to withstand the high current and voltage ratings with lower conduction resistance and switching losses [79].…”

Section: Future Trendsmentioning

confidence: 99%

Review of Reduced Switch-Count Power Cells for Regenerative Cascaded H-Bridge Motor Drives

Kang

Badawi

et al. 2022

IEEE Access

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Cascaded H-Bridge (CHB) topology is one of the attractive topologies in high-power mediumvoltage motor drive applications due to its modularity and scalability. Research in high power regenerative motor drives has gained significant attention with the increasing demand for efficient energy use. In a cascaded H-Bridge (CHB) converter, the regenerative capability can be introduced by replacing diode front end (DFE) with active front end (AFE) topologies. However, this results in a huge increase in the number of power semiconductors, gate drivers, and heat sink size and thus increases the overall size and cost of the regenerative CHB motor drives. To overcome the aforementioned challenges, different power cell designs have been introduced to reduce the switch count, allowing the design of more suitable-sized and more economical drives. This paper comprehensively reviews the reduced switch-count power cell designs, including single-phase and three-phase grid connections. Each reduced switch-count cell design is analyzed, and its advantages and disadvantages are studied in detail. The challenges that arise with each design and the method to address the challenges are discussed.

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Section: Future Trendsmentioning

confidence: 99%

Review of Reduced Switch-Count Power Cells for Regenerative Cascaded H-Bridge Motor Drives

Kang

Badawi

et al. 2022

IEEE Access

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“…Currently, siliconbased materials are the predominant choice for commercial power semiconductor devices due to their cost-effectiveness (She et al, 2017). However, the capacities of the silicon material are constrained by its small bandgap (E g ' 1.12 eV), rendering it unsuitable for temperatures higher than about 175 � C (Ravinchandra et al, 2022). The breakdown field of silicon material is limited to about 0.3 � 10 6 V cm À 1 (Ravinchandra et al, 2022).…”

Section: Introductionmentioning

confidence: 99%

“…However, the capacities of the silicon material are constrained by its small bandgap (E g ' 1.12 eV), rendering it unsuitable for temperatures higher than about 175 � C (Ravinchandra et al, 2022). The breakdown field of silicon material is limited to about 0.3 � 10 6 V cm À 1 (Ravinchandra et al, 2022). The maximum blocking voltage achievable in commercial insulated gate bipolar transistor (IGBT) power modules is below 6.5 kV (She et al, 2017).…”

Section: Introductionmentioning

confidence: 99%

Dehydroxylation and structural transition in α-GaOOH investigated by in situ X-ray diffraction

Ding,

Shi,

Zhang

et al. 2024

J Appl Crystallogr

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Ga2O3 is an ultra-wide-bandgap semiconductor that is receiving considerable attention due to its promising applications in high-frequency, high-power and high-temperature settings. It can be prepared by calcinating the α-GaOOH phase at high temperatures. Understanding the significance of hydroxyl groups in α-GaOOH, dehydroxylation and the structural transition at high temperatures has become a key aspect of preparing high-quality α-Ga2O3 crystals, but the underlying mechanism remains unknown. In this research, α-GaOOH nanorods were hydrothermally synthesized and the structural evolution of α-GaOOH investigated at high temperatures by in situ X-ray diffraction. The hydroxyl group in α-GaOOH squeezes Ga3+ from the center of the [GaO6] octahedron, resulting in deformed [GaO6] octahedra and significant microstrain in α-GaOOH. The hydroxyl groups are peeled off from α-GaOOH when the temperature exceeds 200°C, resulting in contraction along the c-axis direction and expansion along the a-axis direction of α-GaOOH. When the temperature exceeds 300°C, the Ga—O bond inside the double chains preferentially breaks to generate square-wave-like octahedron chains, and the neighboring chains repack to form hexagonal-like octahedron layers. The octahedron layers are packed up and down by electrostatic interaction to generate the α-Ga2O3 structure. This work highlights the role of hydroxyl groups in α-GaOOH, dehydroxylation and the structural transition on the atomic scale, providing valuable guidelines for the fabrication of high-quality α-Ga2O3 crystals.

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“…As opposed to old-fashioned converters, WBG converters require a greater degree of complexity for design and manufacturing [ 6 , 7 ]. Due to tight requirements, which are primarily concerned with size and bandwidth (BW), it is more difficult to integrate components, such as sensors.…”

Section: Introductionmentioning

confidence: 99%

Current Sensor Integration Issues with Wide-Bandgap Power Converters

Sirat

Parkhideh

2023

Sensors

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Precise current sensing is essential for several power electronics’ protection, control, and reliability mechanisms. Even so, WBG power converters will likely struggle to develop a single current-sensing scheme to measure various types of currents due to the limited space and size of these devices, the required high sensing speed, and the high electromagnetic interference (EMI) emissions they cause. Analysis of existing current sensors was conducted in such terms with the objective of understanding the challenges associated with their integration into WBG power converters. Since each of these requirements has different design tradeoffs, it is challenging to consider one specific method of current sensing to be perfect for all situations; thus, the possibility of developing novel methods to improve the performance of these single-scheme current sensors is further explored.

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Review of wide band-gap technology: power device, gate driver, and converter design

Cited by 11 publications

References 70 publications

Review of Reduced Switch-Count Power Cells for Regenerative Cascaded H-Bridge Motor Drives

Review of Reduced Switch-Count Power Cells for Regenerative Cascaded H-Bridge Motor Drives

Dehydroxylation and structural transition in α-GaOOH investigated by in situ X-ray diffraction

Current Sensor Integration Issues with Wide-Bandgap Power Converters

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