Review of the GaAs solar cell Italian national programme

Svelto, F.; Flores, C.; Paletta, F.; Passoni, D.; Signorini, C.; Rossi, E.

doi:10.1016/0094-5765(90)90059-t

Cited by 5 publications

(3 citation statements)

References 1 publication

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“…Recently, III-V compounds semiconductors are used in optoelectronics and SCs with higher efficiencies compared to silicon SCs [6][7][8][9]. Among these compound semiconductors, GaAs is currently one of the most attractive candidates for photovoltaic applications due to its lower temperature coefficient and higher electron mobility and higher density of states compared to silicon SCs [10][11][12][13][14][15]. The surface recombination (SR) has a great effect on the performance of a SC, decreasing its photocurrent and increasing dark current, particularly for small area cells.…”

Section: Introductionmentioning

confidence: 99%

Modeling and simulation of high-efficiency GaAs PIN solar cells

et al. 2020

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Solar energy is the most convenient and reliable energy source among all renewable energy resources and an efficient photovoltaic device is required to convert this energy into utilizable energy. Different types of solar cells (SC) are commercially available. However, various parameters need to be optimized to get maximum efficiency from a SC. In this study we have presented a SC model in which dependence of quantum efficiency (QE) on various parameters has been investigated. The mobility of the carriers has been varied with wide range along with the carrier life time (LT). Results show that maximum efficiencies can be achieved up to 11.10% and 10.81% keeping the electron and hole mobility to be 1500 cm 2 V -1 s -1 and 300 cm 2 V -1 s -1 respectively with electron and hole carrier LT to be 3ns and 7ns respectively. The effect of surface recombination velocity (SRV) has also been brought under observation and the maximum efficiency is found to be 13.75% at electron and hole SRV equal to be 10 3 ms -1 . Results shows that the higher photovoltaic efficiencies can be achieved by increasing the mobility and carrier LT while decreasing the surface recombination velocities.

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Section: Introductionmentioning

confidence: 99%

Modeling and simulation of high-efficiency GaAs PIN solar cells

et al. 2020

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“…Silver films are widely used in electrode, interconnection, decorative coating, reflector mirror, and transparent conducting films, etc., because of their excellent optical, thermal and electrical properties. Among the various applications, interconnection, which shows high conductivity (about 6.3 × 10 7 m −1 Ω −1 ) and also nice weldability, is used for interconnected materials to provide a current path between single cells for solar cell arrays in low earth orbit (LEO) spacecraft [ 1 , 2 , 3 , 4 , 5 ]. However, in the presence of atomic oxygen (AO, the AO reaction rate of Ag is about 10.5 × 10 −24 cm 3 atom −1 [ 4 ]), Ag is easily corroded and oxidized by AO, leading to serious damage: electrical conductivity and mechanical strength losses, as well as flaking off of the material.…”

Section: Introductionmentioning

confidence: 99%

“…However, in the presence of atomic oxygen (AO, the AO reaction rate of Ag is about 10.5 × 10 −24 cm 3 atom −1 [ 4 ]), Ag is easily corroded and oxidized by AO, leading to serious damage: electrical conductivity and mechanical strength losses, as well as flaking off of the material. With the development of interconnected materials, silver-coated molybdenum interconnectors have replaced the traditional Ag interconnectors [ 3 , 4 , 5 , 6 , 7 , 8 , 9 ]. Generally, the adhesive strength of the Ag/Mo interface should be larger than 10 MPa to sustain the machining stress in the parallel gap resistance welding process and later use.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of the Adhesive Strength between Ag Films and Mo Substrate by Ag Implanted via Ion Beam-Assisted Deposition

Zhu

Meng

et al. 2018

Materials

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Silver-coated molybdenum is an optimum material selection to replace pure silver as solar cell interconnector. However, the low adhesive strength between Ag films and Mo substrate hinders the application of the interconnector, because it is difficult to form metallurgical bonding or compound in the film/substrate interface using conventional deposition. In order to improve the adhesion, some Ag particles were implanted into the surface of Mo substrate by ion beam-assisted deposition (IBAD) before the Ag films were deposited by magnetron sputtering deposition (MD). The objective of this work was to investigate the effect of different assisted ion beam energy on the film/substrate adhesive properties. In addition, the fundamental adhesion mechanism was illustrated. The results revealed that the adhesion between Ag films and Mo substrate could be greatly enhanced by IBAD. With the increase of the assisting ion beam energy, the adhesive strength first increased and then decreased, with the optimum adhesion being able to rise to 25.29 MPa when the energy of the assisting ion beam was 30 keV. It could be inferred that the combination of “intermixing layer” and “implanted layer” formed by the high-energy ion bombardment was the key to enhancing the adhesion between Ag films and Mo substrate effectively.

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