Review of series and parallel connection of IGBTs

Shammas, N.Y.A.; Withanage, R.; Chamund, D.

doi:10.1049/ip-cds:20050053

Cited by 88 publications

(44 citation statements)

References 10 publications

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“…The IGBT with lower tailing current withstands higher V CE [18]. Generally, in this period, the active-clamping circuit and other aforementioned gate-side voltage-balancing circuits with a similar principle are not as effective as the snubber circuit at the collector-emitter side of the IGBT [3], [8], [19], [20]. When any of these voltagebalancing circuits is used alone in the IGBT series connection circuit without the collector-emitter-side dynamic-balancing circuit, the voltage imbalance during the tailing current period might be suppressed by drastically adjusting the parameters of the voltage-balancing circuit.…”

Section: Introductionmentioning

confidence: 97%

“…Thus, the switching loss and switching time will not significantly increase. However, most of these voltage-balancing methods require sensors with very high bandwidth, high-speed analogto-digital conversion chips, and high-speed microcontrollers so as to implement the sampling and control of the dynamic switching process with a very short time scale [3]. Generally, the sampling frequency is required to be higher than 100 MHz.…”

Section: Introductionmentioning

confidence: 99%

“…The function of the voltage-balancing circuit is to distribute dc-bus voltage of the converter to every seriesconnected device as equally as possible in both static switching state and dynamic switching state. Generally, there are two main categories of the voltage-balancing circuits for seriesconnected insulated-gate bipolar transistors (IGBTs), which are the collector-emitter side and the gate side [2], [3]. From the view of energy, the collector-emitter-side voltage-balancing circuit absorbs a part of the imbalanced energy that is corresponding to the imbalanced voltage and dissipates it outside of the IGBT.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Parameter Design of a Three-Level Converter Based on Series-Connected HV-IGBTs

Lü

Zhao

et al. 2014

IEEE Trans. on Ind. Applicat.

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Although the maximum collector-emitter voltage of a high-voltage insulated-gate bipolar transistor (HV-IGBT) reaches 3300 V or higher, it still cannot satisfy the requirements of some high-voltage high-power converters. Applying power semiconductor devices in series connection can effectively improve the voltage rating and power rating of a power electronic converter.The key issue of device series connection is voltage balancing in static switching state and dynamic switching state. In this paper, a three-level converter based on series-connected HV-IGBTs is presented, its voltage-balancing subcircuits are analyzed, and the parameter design method for the converter is proposed. During the design process, key performance indexes of the series connection circuit, such as the voltage-balancing effect, loss of the voltage-balancing circuit, switching loss, and switching time, are comprehensively considered. Moreover, component parameters of the three-level converter are calculated considering the influence of the voltage-balancing circuit. The proposed parameter design method is applied in the development of a three-level HV-IGBT (4500 V/600 A) series connection test platform with 10 000-V rated dc-link voltage. Experimental results verify the validity of the proposed method.Index Terms-High-voltage insulated-gate bipolar transistor (HV-IGBT), parameter design, series connection, three level, voltage balancing.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Parameter Design of a Three-Level Converter Based on Series-Connected HV-IGBTs

Lü

Zhao

et al. 2014

IEEE Trans. on Ind. Applicat.

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“…A solution where an additional snubber circuit is connected to each transistor seems to be more realistic. The idea was presented in [19]- [20] for IGBTs and also investigated for SiC MOSFETs in [13]- [15]. Those DRC circuits (Fig.…”

Section: Experiments With a Snubber Circuitmentioning

confidence: 99%

Experimental study on fast-switching series-connected SiC MOSFETs

Kopacz

Peftitsis

Rąbkowski

2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

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This paper presents an experimental study on series-connection of Silicon Carbide MOSFETs. The switching performance of two series-connected SiC MOSFETs rated at 1200 V and having on-state resistances of 80 mΩ was tested using a double-pulse test circuit at blocking voltages up to 1 kV DC and currents up to 50 A. The design and experimental validation of a suitable double-pulse test setup and gate drive circuits are also shown. Moreover, the impact of additional DRC snubbers ensuring an equal voltage sharing among the series-connected transistors is also investigated.

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“…Reliable rotary actuation can be achieved with velocity and torque adding gears, for example. Electrical systems deal with the dual variables of voltage and current, and series and parallel conguration are commonly used in IGBT (insulated gate bipolar transistor) high power switching devices (Shammas et al, 2006). Transportation systems and communication networks also have corresponding relations governing throughput and latency.…”

Section: Aggregation On a Single Levelmentioning

confidence: 99%