“…The switching losses were analytically calculated, starting from the measured E on and E off , and determined from device characterization, which can be defined as the function of V DD , I DS and R g . Under the assumption that V DS = 400 V and R g = 10 Ω maintain constant values, the switching energies can be exclusively expressed as functions of I DS , (7). Their behavior can be depicted using a generic curve-fitting mathematical tool, where the weight coefficients k 1 , k 2 , k 3 and k 4 have been determined at different junction temperatures of T j .…”