Review of nanosheet metrology opportunities for technology readiness

Breton, Mary; Schmidt, Daniel; Greene, Andrew; Frougier, Julien; Felix, Nelson

doi:10.1117/1.jmm.21.2.021206

Cited by 18 publications

(21 citation statements)

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“…But for next generation device structures, µXRF is being studied to probe sub-surface features such as cavities. 11,18 In many cases however, a quantitative information about the compositional changes versus sample position is needed and simple fluorescence count rate distributions are not sufficient. Existing fundamental parameter (FP) based physical quantification schemes for µ-XRF, 19,20 however, require a pre-calibration of the employed instrument using adequate reference samples or calibration standards as well as a good knowledge of the transmission behaviour of the employed micro focusing optic.…”

Section: Reference-free µXrfmentioning

confidence: 99%

Small target compatible dimensional and analytical metrology for semiconductor nanostructures using x-ray fluorescence techniques

Hönicke

Kayser

Soltwisch

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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X-ray fluorescence techniques in special operation modes can provide valuable quantitative insights for semiconductor related applications and can be made compatible to typical sizes of homogeneously structured metrology pads. As their dimensions are usually in the order of several 10 μm per direction, it must be ensured that no adjacent regions are irradiated or that no x-ray fluorescence radiation from adjacent areas reaches the detector. As this can be realized by using small excitation beams, a multitude of information can be retrieved from such XRF data. In addition to elemental composition, including sensitivity to sub-surface features, one can derive quantitative amounts of material and even dimensional properties of the nanostructures under study. Here, we show three different approaches for studies related to semiconductor applications that are capable to be performed on real world dies with commonly sized metrology pads.

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Section: Reference-free µXrfmentioning

confidence: 99%

Small target compatible dimensional and analytical metrology for semiconductor nanostructures using x-ray fluorescence techniques

Hönicke

Kayser

Soltwisch

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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“…Consequently, there is a considerable need for characterization techniques that can address these limitations, that is, provide non-destructive, rapid, and multidimensional feedback. [15] Methods based on X-ray fluorescence (XRF) can provide such non-invasive insights into the elemental composition of a wide range of materials. [16][17][18] Due to information depths of up to several µm, even sub-surface parts of nanostructures are easily accessible.…”

Section: Introductionmentioning

confidence: 99%

“…Consequently, there is a considerable need for characterization techniques that can address these limitations, that is, provide non‐destructive, rapid, and multidimensional feedback. [ 15 ]…”

Section: Introductionmentioning

confidence: 99%

Quantitative Element‐Sensitive Analysis of Individual Nanoobjects

Wählisch

Unterumsberger

Hönicke

et al. 2022

Small

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A reliable and quantitative material analysis is crucial for assessing new technological processes, especially to facilitate a quantitative understanding of advanced material properties at the nanoscale. To this end, X‐ray fluorescence microscopy techniques can offer an element‐sensitive and non‐destructive tool for the investigation of a wide range of nanotechnological materials. Since X‐ray radiation provides information depths of up to the microscale, even stratified or buried arrangements are easily accessible without invasive sample preparation. However, in terms of the quantification capabilities, these approaches are usually restricted to a qualitative or semi‐quantitative analysis at the nanoscale. Relying on comparable reference nanomaterials is often not straightforward or impossible because the development of innovative nanomaterials has proven to be more fast‐paced than any development process for appropriate reference materials. The present work corroborates that a traceable quantification of individual nanoobjects can be realized by means of an X‐ray fluorescence microscope when utilizing rather conventional but well‐calibrated instrumentation instead of reference materials. As a proof of concept, the total number of atoms forming a germanium nanoobject is quantified using soft X‐ray radiation. Furthermore, complementary dimensional parameters of such objects are reconstructed.

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“…The semiconductor industry has adopted scaling innovations for generating complementary metal–oxide semiconductor (CMOS) logic technology, following Moore’s law [ 1 , 2 ]. CMOS scaling focuses on low-voltage, high-performance, and cost-effective processes to satisfy the requirements for high-efficiency calculations and high-end mobile applications.…”

Section: Introductionmentioning

confidence: 99%

Structure of an In Situ Phosphorus-Doped Silicon Ultrathin Film Analyzed Using Second Harmonic Generation and Simplified Bond-Hyperpolarizability Model

et al. 2022

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In fabricating advanced silicon (Si)-based metal–oxide semiconductors, the ability to inspect dopant distribution in Si ultrathin films (tens of nm) is crucial for monitoring the amount of dopant diffusion. Here, we perform an anisotropic reflective second harmonic generation (SHG) measurement to demonstrate the sensitivity of SHG to phosphorus (P) concentration within the range of 2.5×1017 to 1.6×1020 atoms/cm3. In addition, we propose an analysis method based on a simplified bond-hyperpolarizability model to interpret the results. The bond vector model that corresponds to the P vacancy clusters is built to calculate the SHG contribution from substitutionally incorporated P atoms. The effect of incorporating P into the Si lattice is reflected in the effective hyperpolarizability, lattice tilt, and deformation of this model. The fitting results of the intuitively defined coefficients exhibit a high correlation to the P concentration, indicating the potential of this model to resolve the properties in complex material compositions. Finally, a comparison with Fourier analysis is made to evaluate the advantages and disadvantages of this model. Combined anisotropic reflective SHG (Ani-RSHG) and the simplified bond-hyperpolarizability model (SBHM) can analyze the crystal structure of doped ultrathin films and provide a non-destructive nanophotonic way for in-line inspection.

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Review of nanosheet metrology opportunities for technology readiness

Cited by 18 publications

References 0 publications

Small target compatible dimensional and analytical metrology for semiconductor nanostructures using x-ray fluorescence techniques

Small target compatible dimensional and analytical metrology for semiconductor nanostructures using x-ray fluorescence techniques

Quantitative Element‐Sensitive Analysis of Individual Nanoobjects

Structure of an In Situ Phosphorus-Doped Silicon Ultrathin Film Analyzed Using Second Harmonic Generation and Simplified Bond-Hyperpolarizability Model

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