Review of Magnetoelectric Sensors

Abstract

Multiferroic magnetoelectric (ME) materials with the capability of coupling magnetization and electric polarization have been providing diverse routes towards functional devices and thus attracting ever-increasing attention. The typical device applications include sensors, energy harvesters, magnetoelectric random access memory, tunable microwave devices and ME antenna etc. Among those application scenarios, ME sensors are specifically focused in this review article. We begin with an introduction of materials development and then recent advances in ME sensors are overviewed. Engineering applications of ME sensors were followed and typical scenarios are presented. Finally, several remaining challenges and future directions from the perspective of sensor designs and real applications are included.

Thin Film Magnetoelectric Sensors Toward Biomagnetism: Materials, Devices, and Applications

“…[31][32][33][34][35] In recent years thin film magnetoelectric (ME) sensors have drawn great attention due to their simple structures, small dimensions, and compatibility with CMOS microfabrication technologies. [36][37][38] ME sensors offer high sensitivity, passive detection scheme, low cost, and room temperature operation. Moreover, owing to their small dimensions, ME sensor arrays can be easily integrated and placed close to living organisms.…”

Repeatable and deterministic all electrical switching in a mixed phase artificial multiferroic

“…Multiferroic systems with large magnetoelectric coupling constants offer exciting potential for implementation in next-generation devices for data storage 1 , 2 , sensing 3 , 4 , and neuromorphic computing 5 , 6 . The promise of these systems resides in their ability to generate large and bistable magnetic responses to applied voltages, which are simple to implement and thus provide a mechanism for switching with enhanced efficiency.…”

Modeling and Parameter Sensitivity Improvement in ΔE-Effect Magnetic Sensor Based on Mode Localization Effect

“…The tunneling magnetoresistance (TMR) sensors exhibit high sensitivity and lower power consumption [ 7 ], but their low-frequency inherent noise, especially the noise component, is unfavorable [ 4 , 8 ] for the application scenarios where the detection of quasi-static magnetic fields is needed. Therefore, MEMS magnetic field sensors with a high limit of detection (1–100 pT/√Hz) and the larger low-frequency measuring range (0.01–100 Hz) for the weak magnetic fields (below 1 nT) have received much attention [ 9 , 10 , 11 , 12 ].…”

“…Magnetoelectric sensors based on multilayer thin films have great potential [ 13 , 14 , 15 ] for the detection of magnetic signals near non-resonant frequencies, especially for quasi-static and low-frequency magnetic fields. Using the direct magnetoelectric effect, the magnetoelectric composite films have high electrical noise caused by parasitic impedance and small magnetoelectric coupling coefficient in nonresonant regimes, resulting in low magnetoelectric sensitivity [ 9 , 12 , 16 ]. Thus, it seriously affects the performance of the magnetic field sensor.…”