Review—Emerging Applications of g-C₃N₄ Films in Perovskite-Based Solar Cells

Abstract

Graphitic carbon nitride, (g-CN/g-C3N4), an oldest material, was extensively used as photocatalyst due to high charge separation and transportation property, tunable band gap, and non-toxicity. Recently, g-CN has been utilized as an electron transport layer, interfacial buffer layer, and for passivation of perovskite layers in solar cell devices. Power conversion efficiency of g-CN-based solar cells has gone beyond 22.13% with device stability of more than 1500 h in dark. Additionally, the enhanced environmental stability of solar cell devices is due to the unique packed two-dimensional (2D) structure of g-CN, which provides protection to the devices against environmental degradation. However, availability of the limited synthesis methods and g-CN thin film formation with varying properties and high surface area, are two major concerns which needs to be further improved. This review covers the different methods of g-CN nanostructure synthesis, thin film formation, and their application in photovoltaic (PV) devices. The potential challenges and perspective of g-CN nanomaterials for solar cells are also included in this review.

Insight into Hot Carrier Kinetics of CsPbBr3/ZnO Heterostructures for Photodetector Application

“…Nevertheless, the open-air instability of perovskites is still a challenge restricting their commercialization. , To address the instability issue, encapsulation of perovskite nanocrystals (PNCs) and heterostructures formation have emerged as a preferred and easy approach. Accordingly, researchers have explored several encapsulators; for instance, many polymers and inorganic oxides were used to provide excellent stability to halide perovskites. − Due to their insulating nature, these encapsulators hinder perovskite-based optoelectronic devices’ performance. Therefore, perovskite heterostructures’ formation with some fast charge transfer materials is the next possible way that will help in both ways (i.e., provide stability and quick charge extraction) for improved performance in optoelectronic devices.…”

Slow Cooling and Transfer Dynamics of Hot Excitons in CsPbBr3 Perovskite Quantum Dots/g-CN Nanosheet Heterostructures: Implications for Optoelectronic Applications

“…Recently, a few strategies have been evolved to design more stable and efficient SCs using composites of two-dimensional (2D) carbonic materials with perovskite. 32 The photophysical properties could be enhanced by forming CsPbBr 3 heterostructures with π-conjugated 2D materials to ease the charge transportation. 33 Another major concern with CsPbBr 3 is instability, which can also be improved by forming CsPbBr 3 heterostructures with 2D materials along with HC dynamics.…”

Nanoscale interfacial engineering of 1D g‐C 3 N 4 enables effective and thermally stable HTL ‐free carbon‐based perovskite solar cells with aging for 100 hours

“…In this regard, the usage of g‐C 3 N 4 in PSCs is recently expanded due to its outstanding optical and electrical features 22,23 . The addition of g‐C 3 N 4 to the active absorbing perovskite and/or the electron transport layer (ETL) increases PCE by around 22.13% 24 . This is mainly due to the defect passivation, increased conductivity, crystallinity, and low charge carrier recombination inside the device 25‐27 .…”

“…22,23 The addition of g-C 3 N 4 to the active absorbing perovskite and/or the electron transport layer (ETL) increases PCE by around 22.13%. 24 This is mainly due to the defect passivation, increased conductivity, crystallinity, and low charge carrier recombination inside the device. [25][26][27] At the PSC interfaces, the wetting (hydrophobic/hydrophilic) character of g-C 3 N 4 and fine control of the interface energetic resulted in a significant performance improvement, including an increase in the stability 25,28,29 To change the electron-transport layer/ perovskite and perovskite/hole-transport layer interfaces, Liu et al 30 have recently used 2D g-C 3 N 4 , a heat-resistant n-type semiconductor.…”