Reversible superconductivity in electrochromic indium-tin oxide films

Aliev, Ali E.; Xiong, Ka; Cho, Kyeongjae; Salamon, M. B.

doi:10.1063/1.4772536

Cited by 7 publications

(16 citation statements)

References 18 publications

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“…In ITO structures, the extracted values of E F generally lie in the range ≈ 0.5-1 eV [70,99,121], corresponding to values of n ≈ 10 20 -10 21 cm −3 . Therefore, ITO can be treated as a highly degenerate semiconductor or a low-n metal, as mentioned.…”

Section: Electron-diffusion Thermopowermentioning

confidence: 99%

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Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

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Abstract.Indium tin oxide (Sn-doped In 2 O 3−δ or ITO) is an interesting and technologically important transparent conducting oxide. This class of material has been extensively investigated for decades, with research efforts focusing on the application aspects. The fundamental issues of the electronic conduction properties of ITO from 300 K down to low temperatures have rarely been addressed. Studies of the electricaltransport properties over a wide range of temperature are essential to unraveling the underlying electronic dynamics and microscopic electronic parameters. In this Topical Review, we show that one can learn rich physics in ITO material, including the semiclassical Boltzmann transport, the quantum-interference electron transport, and the electron-electron interaction effects in the presence of disorder and granularity. To reveal the avenues and opportunities that the ITO material provides for fundamental research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline films, homogeneous singlecrystalline nanowires, and inhomogeneous ultrathin films. We not only address new physics phenomena that arise in ITO but also illustrate the versatility of the stable ITO material forms for potential applications. We emphasize that, microscopically, the rich electronic conduction properties of ITO originate from the inherited freeelectron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material. Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which causes (i) a small residual resistance ratio, (ii) a linear electron diffusion thermoelectric power in a wide temperature range 1-300 K, and (iii) a weak electron dephasing rate. We focus our discussion on the metallic-like ITO material.

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Section: Electron-diffusion Thermopowermentioning

confidence: 99%

“…On the other hand, the possible occurrence of superconductivity in ITO has been explored in references [67][68][69][70].…”

Section: Introductionmentioning

confidence: 99%

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

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“…1d. A comparative analysis of XRD spectra of different ITO films [18] clearly demonstrated the predominance of (100) plane on the surface for LT ITO films deposited on SiO 2 -coated soda lime glass. Due to larger openings on (100) facets, LT ITO films exhibit better intercalation rate and coloration homogeneity than high-density packed (111) facets, observed on the surface of other tested commercially available ITO films.…”

Section: Methodsmentioning

confidence: 95%

“…In addition to the appearance of superconductivity, other properties of ITO films change dramatically upon intercalation. The transparent films color and bleach upon charging and discharging, thus displaying reversible electrochromic properties [18]. For ITO intercalated to different doping levels, one can estimate the T c by the color intensity of the film (S1.2 in SM).…”

Section: Methodsmentioning

confidence: 99%

“…The superconducting transition is tunable, with dome-shaped behavior of T c versus electron density with maximum at 5 K [18]. Surprisingly, the transition into the superconducting state for films placed perpendicular to the external magnetic field is accompanied by paramagnetic response in SQUIDmagnetometer measurements in the field cooling regime.…”

Section: Introductionmentioning

confidence: 96%

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Paramagnetic Meissner Effect in Electrochemically Doped Indium-Tin Oxide Films

Aliev

Andrade

Salamon

2016

J Supercond Nov Magn

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Transparent conductive indium-tin oxide (ITO) thin films, electrochemically intercalated with alkali (Li + , Na + , K + , Rb + , Cs + ), alkali earth (Mg +2 , Ca +2 ), or complex NH + 4 ions, show tunable superconducting transitions with dome-shaped behavior of T c versus electron density around the maximum at ∼ 5 K. On field cooling, the transition into the superconducting state is accompanied by a paramagnetic response, i.e., an increase of magnetization, rather than the usual diamagnetic Meissner response. We provide an extensive study of this so-called paramagnetic Meissner effect (PME), using DC SQUID, transport measurements and a variety of sample sizes and growth conditions. We show that the PME in electrochemically doped ITO films results from a higher T c at the sample edges than at the center of disk-shaped samples, causing flux to be expelled towards the center of the disk, following the flux-compression theory of Koshelev and Larkin. Changing to the opposite spatial T c profile largely removes the paramagnetic response. The paramagnetic magnetization is strongly influenced by sample geometry and flux pinning Electronic supplementary material The online version of this article (

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