Reversible optical storage on a low-doped Te-based chalcogenide film with a capping layer

Clemens, P.

doi:10.1364/ao.22.003165

Cited by 35 publications

(4 citation statements)

References 8 publications

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“…Tellurium is a semiconductor that can be switched reversibly between crystalline and amorphous phases by optical illumination [10][11][12][13][14] . The amorphous phase has lower reflectivity and lower optical absorption at 1.55 eV (λ = 800 nm) than the crystalline phase 15,16 .…”

Section: Introductionmentioning

confidence: 99%

Femtosecond laser amorphization of tellurium

et al. 2018

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Polycrystalline tellurium becomes amorphous after irradiation with strong femtosecond pulses. The amorphization is sensitive to the initial temperature but not very sensitive to the temporal profile of the optical excitation. Above the amorphization threshold, single-shot transient reflectivity traces show clear coherent phonon oscillations within 1 ps. These results suggest that amorphization is due to thermal melting rather than nonthermal melting or switching for pump fluences up to the ablation threshold.

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Section: Introductionmentioning

confidence: 99%

Femtosecond laser amorphization of tellurium

et al. 2018

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“…Tellurium is an example of a phase-change material whose crystalline and amorphous phases can be switched reversibly by optical illumination when kept below its glass transition temperature (~ 285 K) [1]. It is generally believed that amorphization follows melting of the material but it is still unclear whether the melting is thermal (due to high lattice temperature) or non-thermal (due to high carrier density) under irradiation of femtosecond pulses [2].…”

Section: Introductionmentioning

confidence: 99%

Amorphization in crystalline tellurium by femtosecond pulses

et al. 2019

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“…Early studies involved static cycling of tellurium-based alloys [5]. Progress continued with 4x10 4 static cycles reported in 1983 [6]. Achievement of 106 cycles on a disk with 55db CNR using a tellurium-oxide based recording layer was also announced in 1983 [7].…”

Section: Introductionmentioning

confidence: 99%

Phase Change Optical Storage - A Critical Assessment

Rubin

1991

J. Magn. Soc. Jpn.

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-Recently there has been renewed interest in phase transformation based optical storage technology. Included among the many reasons for this interest has been the achievement of: (1) fast erase in conjunction with data stability, (2) demonstration of direct overwrite with good erasability, and in the last couple of years, (3) good progress in increasing the cyclability of the media. Direct overwrite has been demonstrated at media speeds from 1.25 to 22m/s. More than 2x10 6 cycles have been achieved with low BER. In addition, phase change media exhibits strong signal response at wavelengths shorter than 830nm and requires a much simpler optical head. In this paper we review past progress and assess the current status.

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Reversible optical storage on a low-doped Te-based chalcogenide film with a capping layer

Cited by 35 publications

References 8 publications

Femtosecond laser amorphization of tellurium

Femtosecond laser amorphization of tellurium

Amorphization in crystalline tellurium by femtosecond pulses

Phase Change Optical Storage - A Critical Assessment

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