“…The presence of an insulator located at grain boundaries rises the tunneling barrier, increasing thus the magnetoresistance. Such an insulator role can be played by small amounts of SrMoO 4 impurity [17,34,41,43,45,51,52] or by oxygen incorporated at grain boundaries [13]. These effects (difficultly separable one from the others) indicate that highest magnetoresistance is obtained for samples having small grains and low antisite disorder.…”