2020
DOI: 10.1016/j.apsusc.2020.146917
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Reversible graphitization of SiC: A route towards high-quality graphene on a minimally step bunched substrate

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Cited by 19 publications
(7 citation statements)
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“…The C 1s spectrum showed evidence of primarily C–C bonding with some C–O and CO character that likely results from adventitious carbon. , To probe the buried interface of these thicker samples, an XPS depth profile analysis was performed using a GCIS to sputter the sample in situ in 10 min intervals. At a 50 min etch time, a new peak began to appear in the C 1s spectrum (Figure S2B) corresponding to the BE of Si–C. , With increasing etch time, the amplitude of the C–C peak progressively decreased while the amplitude of the C–Si peak increased, as shown in Figure C for peak amplitudes derived from fits of the spectra in Figure S2B. Note that the Si 2p spectrum (Figure S2C) showed evidence of Si–O at the 50 min etch time while the Si–Si peak did not shift during the etch process, indicating that sample charging did not alter the peak positions.…”
Section: Results and Discussionmentioning
confidence: 91%
“…The C 1s spectrum showed evidence of primarily C–C bonding with some C–O and CO character that likely results from adventitious carbon. , To probe the buried interface of these thicker samples, an XPS depth profile analysis was performed using a GCIS to sputter the sample in situ in 10 min intervals. At a 50 min etch time, a new peak began to appear in the C 1s spectrum (Figure S2B) corresponding to the BE of Si–C. , With increasing etch time, the amplitude of the C–C peak progressively decreased while the amplitude of the C–Si peak increased, as shown in Figure C for peak amplitudes derived from fits of the spectra in Figure S2B. Note that the Si 2p spectrum (Figure S2C) showed evidence of Si–O at the 50 min etch time while the Si–Si peak did not shift during the etch process, indicating that sample charging did not alter the peak positions.…”
Section: Results and Discussionmentioning
confidence: 91%
“…N CC ( r ) at T = 2500 K has a higher first plateau due to the increase of C–C homonuclear bonds, and no secondary plateau is observed in the inset of Figure d. It has been empirically established since the 1960s that thermal graphitization can occur on the SiC surface at a high temperature due to Si sublimation from the surface. Although the graphene-like structure is not observed in our simulation for the bulk system, the different types of carbon clusters appear due to the increase in C–C bonds.…”
Section: Results and Discussionmentioning
confidence: 92%
“…O material obtido foi predominantemente grafeno em monocamada, com menos de 5% da área tendo flocos de grafeno de duas e três camadas que não aumentaram sua concentração com a extensão do tempo de processo. A preparação de monocamadas de grafeno por decomposição térmica de SiC tem sido outra rota viável para síntese de camadas uniformes de grafeno [90]. No entanto, a qualidade estrutural em grande escala é limitada devido às ocorrências de descontinuidade dos filmes.…”
Section: Estrutura E Obtenção De Camadas De Grafenounclassified
“…Desse modo, a decomposição de SiC pode levar a coexistência de regiões de diferentes espessuras de filme, como mostrado por microscopia eletrônica de baixa energia (LEEM) [92,93]. Apesar da não homogeneidade dos filmes obtidos, este procedimento vem sofrendo avanços, como recozimento em ultra-alto vácuo (UHV) e utilização de atmosfera inerte de argônio, processos em múltiplas etapas, controle de pressão atmosférica e grafitização controlada, acarretando filmes mais uniformes e materiais de alta qualidade, capazes de competir com grafeno de CVD [81,90,94].…”
Section: Estrutura E Obtenção De Camadas De Grafenounclassified