2010
DOI: 10.1063/1.3428963
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Reversible electron-induced conductance in polymer nanostructures

Abstract: We report a mechanism for controlling conductance in polymer nanostructures. Poly(3-dodecylthiophene-2,5-diyl) (PDDT) nanostructures were directly written between gold electrodes using thermal dip pen nanolithography and then characterized in UHV. We find that the conductivity of a PDDT nanostructure can be increased by more than five orders of magnitude (from <10−4 to 10 S cm−1) by exposure to energetic electrons, and then repeatedly returned to a semi-insulating state by subsequent exposure to hydroge… Show more

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Cited by 6 publications
(6 citation statements)
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“…In thermal DPN (tDPN), an AFM cantilever with an integrated resistive heater at the tip deposits inks that are solid at room temperature but that can flow at elevated temperature. Heated AFM tips can deposit nanometer-scale patterns of polymers [13][14][15][16], metals [17], and polymer-nanoparticle composites [18].…”
Section: Introductionmentioning
confidence: 99%
“…In thermal DPN (tDPN), an AFM cantilever with an integrated resistive heater at the tip deposits inks that are solid at room temperature but that can flow at elevated temperature. Heated AFM tips can deposit nanometer-scale patterns of polymers [13][14][15][16], metals [17], and polymer-nanoparticle composites [18].…”
Section: Introductionmentioning
confidence: 99%
“…PDDT is also interesting because it becomes highly ordered, forming self-assembled layers on a silicon surface [ 14 ], when it is properly annealed. This ordering increases its ability to conduct current after electron beam exposure [ 15 ].…”
Section: Resultsmentioning
confidence: 99%
“…It was found that the width of the deposited line depends on the tip load, cantilever Overview of relevant nanofabrication processes after addition of material to the sample from a heated tip. a Direct deposition of a molten material 108,[111][112][113][114][115][116]127 or a loaded carrier matrix (e.g., polymer containing nanoparticles), which can be removed after the transfer 117 . b Direct deposition of a resist for dry etching into the substrate material 118,121 .…”
Section: Direct Deposition Of Functional Materialsmentioning
confidence: 99%