Reversible and Nonvolatile Manipulation of the Spin-Orbit Interaction in Ferroelectric Field-Effect Transistors Based on a Two-Dimensional Bismuth Oxychalcogenide

Yan, Ming‐Yuan; Li, Shuangshuang; Yan, Jing; Xie, Lihua; Xu, Meng; Guo, Lei; Zhang, Shujuan; Gao, Guoying; Wang, Feifei; Zhang, Shan‐Tao; Wang, Xiaolin; Chai, Yang; Zhao, Weiyao; Zheng, Ren‐Kui

doi:10.1103/physrevapplied.18.044073

Phys. Rev. Applied

2022

DOI: 10.1103/physrevapplied.18.044073

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Reversible and Nonvolatile Manipulation of the Spin-Orbit Interaction in Ferroelectric Field-Effect Transistors Based on a Two-Dimensional Bismuth Oxychalcogenide

Ming‐Yuan Yan

Shuangshuang Li²,

Jing Yan³

et al.

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2024

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Cited by 3 publications

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Recent Advances in the Growth Strategies, Multifunctional Properties, and Emerging Applications of Two‐Dimensional Non‐van der Waals Bismuth Oxychalcogenides and Prospective Heterostructures

Hossain,

Jena,

Giri

2024

Small Structures

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With the advent of two‐dimensional (2D) van der Waals (vdW) materials, many non‐van der Waals (nvdW) materials have been synthesized and are being exploited for novel applications. Bismuth oxychalcogenides (Bi2O2X; X is S, Se, Te), a nvdW series with moderate band gap semiconductors, possess high carrier mobility and air stability. The layers in Bi2O2X stay with a formal bond, giving rise to distinct structural, optical, thermal, and electronic properties different from conventional vdW materials. Herein, these properties, their synthesis, and transfer methods of 2D Bi2O2X are examined. The photodetector application of Bi2O2X and their heterostructure (HS) is surveyed with special attention to Bi2O2Se. Beyond the photodetector, the other emerging application fields, such as gas‐bio sensors, optoelectronic imaging, integrated memory, solar cells, and photothermal technology of Bi2O2X are looked over. Based on the ongoing research and challenges, the strategies for future innovations are presented from basics to miniaturized applications. In view of the band offsets of vdW and nvdW semiconductors, the type of HS of a series of 94 vdW‐nvdW sets is proposed. This review will guide future studies on Bi2O2X and their HS to meet the increasing demands in multifunctional applications from the laboratory to the industrial scale.

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Recent Advances in the Growth Strategies, Multifunctional Properties, and Emerging Applications of Two‐Dimensional Non‐van der Waals Bismuth Oxychalcogenides and Prospective Heterostructures

Hossain,

Jena,

Giri

2024

Small Structures

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Domain-modified engineering for low-power resistive switching in ferroelectric diodes

Niu,

Jiang,

Shi

et al. 2024

Applied Physics Letters

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Neuromorphic devices based on ferroelectric resistive switching (RS) effects are promising to simulate the information recognition and memory of the human brain. However, the high power of RS elements in crossbar arrays is still an issue, limiting the neuromorphic applications. Here, we propose a domain-modified engineering for low-power RS in ferroelectric diodes by locally introducing relaxor ferroelectric units to lower domain switching barriers. A low-power RS of ∼ 70 μW, with large OFF/ON resistance ratio and high endurance, is achieved in Au/0.8BaTiO3-0.1Ba0.7Sr0.3TiO3-0.1BaTi0.7Zr0.3O3/Pt diodes, which is about 48.5% lower than that in Au/BaTiO3/Pt diodes. The interaction between macrodomains is depressed by domain modification engineering, lowering domain switching barriers, thereby operating voltage and power are significantly modulated. Meanwhile, good nonvolatility is obtained since the remanent polarization is partially maintained by the initial macrodomains and its decrease is slowed down by the relaxor units. This work provides a strategy to lower RS power by domain modification engineering for developing memristors and neuromorphic computing devices.

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Nonvolatile ferroelectric control of electronic properties of Bi₂Te₃

Ding 丁,

Li 李,

Kang 康

et al. 2024

Chinese Phys. B

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Nonvolatile electric-field control of the unique physical characteristics of topological insulators (TIs) is essential for the fundamental research and development of practical electronic devices. Electrically tunable transport properties through gating materials have been extensively investigated. However, the relatively weak and volatile tunability limits its practical applications in spintronics. Here, we demonstrate the nonvolatile electric-field control of Bi2Te3 transport properties via constructing ferroelectric Rashba architectures, i.e., 2D Bi2Te3/α-In2Se3 ferroelectric field-effect transistors. By switching the polarization states of α-In2Se3, the Fermi level, resistance, Fermi wave vector, carrier mobility, carrier density and magnetoresistance (MR) of the Bi2Te3 film can be effectively modulated. Importantly, a shift of the Fermi level towards a band gap with a surface state occurs as switching to a negative polarization state, the contribution of the surface state to the conductivity then increases, thereby increasing the carrier mobility and electron coherence length significantly, resulting in the enhanced weak anti-localization (WAL) effect. These results provide a nonvolatile electric-field control method to tune the electronic properties of TI and can further extend to quantum transport properties.

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Reversible and Nonvolatile Manipulation of the Spin-Orbit Interaction in Ferroelectric Field-Effect Transistors Based on a Two-Dimensional Bismuth Oxychalcogenide

Cited by 3 publications

References 43 publications

Recent Advances in the Growth Strategies, Multifunctional Properties, and Emerging Applications of Two‐Dimensional Non‐van der Waals Bismuth Oxychalcogenides and Prospective Heterostructures

Recent Advances in the Growth Strategies, Multifunctional Properties, and Emerging Applications of Two‐Dimensional Non‐van der Waals Bismuth Oxychalcogenides and Prospective Heterostructures

Domain-modified engineering for low-power resistive switching in ferroelectric diodes

Nonvolatile ferroelectric control of electronic properties of Bi₂Te₃

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Reversible and Nonvolatile Manipulation of the Spin-Orbit Interaction in Ferroelectric Field-Effect Transistors Based on a Two-Dimensional Bismuth Oxychalcogenide

Cited by 3 publications

References 43 publications

Recent Advances in the Growth Strategies, Multifunctional Properties, and Emerging Applications of Two‐Dimensional Non‐van der Waals Bismuth Oxychalcogenides and Prospective Heterostructures

Recent Advances in the Growth Strategies, Multifunctional Properties, and Emerging Applications of Two‐Dimensional Non‐van der Waals Bismuth Oxychalcogenides and Prospective Heterostructures

Domain-modified engineering for low-power resistive switching in ferroelectric diodes

Nonvolatile ferroelectric control of electronic properties of Bi2Te3

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Product

Resources

About

Nonvolatile ferroelectric control of electronic properties of Bi₂Te₃