Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

Kusaka, Yasuyuki; Shirakawa, Naoki; Ogura, Shintaro; Leppäniemi, Jaakko; Sneck, Asko; Alastalo, Ari; Ushijima, Hirobumi; Fukuda, Nobuko

doi:10.1021/acsami.8b07465

Cited by 23 publications

(28 citation statements)

References 30 publications

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Section: Figures Of Merit and Current Challenges Of S‐rrammentioning

confidence: 99%

“…These electrodes reached significant conductivity at a low film thickness (28 nm) with a smooth surface (roughness of 0.22 nm) that can be used in the future to boost the overall performance of fully printed S-RRAMs. [342] There are also general parameters for tuning the RS performance, which are applicable to both physical (vacuum-based) and chemical fabrication methods. These include; energy band alignments at interfaces, chemical interface reactions, and the doping profile of the RS material.…”

Section: Current Status and Upcoming Challengesmentioning

confidence: 99%

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Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

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Section: Figures Of Merit and Current Challenges Of S‐rrammentioning

confidence: 99%

Section: Current Status and Upcoming Challengesmentioning

confidence: 99%

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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“…[32][33][34] Due to this unique characteristic of RO printing, it has been researched for use in the fabrication of sophisticated electronic applications that require ultrafine conductive patterns such as thin-film transistors and touchscreen sensors. [35,36] Recently, beyond batch-type processing based on a roll-to-plate system, RO printing has been proved to be feasible for R2R continuous processing, paving the way for the high-throughput and low-cost fabrication of high-resolution patterns. [37][38][39] However, there are still several difficulties associated with the RO printing technique.…”

Section: Introductionmentioning

confidence: 99%

Roll‐to‐Roll Reverse‐Offset Printing Combined with Photonic Sintering Process for Highly Conductive Ultrafine Patterns

Zhong

Seok

et al. 2020

Adv Eng Mater

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Figure 5. Device structure and performance of R2R RO Ag mesh-based and ITO-based OLED. a) Schematic of a flexible OLED structure using inverted architecture. b) Device characteristics of current density versus voltage. The inset shows a photograph of a flexible OLED device in operation. Device characteristics such as c) luminance versus voltage and d) current efficiency versus current density of OLED.

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“…These types of inks allow the formation of the semi‐dry state as strong cohesion arises due to solute‐solute interactions, when the solvent content diminishes through evaporation and absorption to PDMS. We have recently shown that also metal acetylacetonate precursor inks can be printed using ROP as the source/drain‐contacts (S/D) and protective layers of MO TFTs . Earlier, metal nitrates dissolved in organic or aqueous solvents have shown to yield high performance MO TFTs as spin‐coated and printed semiconductor films with performance beyond what is achievable using other types of metal oxide precursors, such as metal acetates and chlorides .…”

mentioning

confidence: 99%

“…The Ag contacts could be improved by printing a thin, n ‐doped interface layer, such as polyetyheleneimine‐doped In 2 O 3 , to assist in the charge injection . An alternative route to Ag is to use the ROP of conductive oxides or Cu nanoparticles as the S/D contacts.…”

mentioning

confidence: 99%

Reverse‐Offset Printing of Metal‐Nitrate‐Based Metal Oxide Semiconductor Ink for Flexible TFTs

Leppäniemi

Sneck

Kusaka

et al. 2019

Adv Elect Materials

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Reverse‐offset printing (ROP) is a novel printing technique capable of forming electronics‐industry‐relevant linewidths (≈1 µm) with good thickness control and sharp edge definition. It is demonstrated that through a controlled oxygen‐plasma treatment, the energy of the surfaces related to the process steps of ROP can be optimized to allow the patterning of metal‐oxide semiconductor layers using a simple printing ink based on metal nitrates dissolved in an organic solvent. The steps of the ROP process are analyzed using surface‐energy measurements and Fourier transform infrared spectra of the ink during drying. Thin‐film transistors (TFTs) fabricated using a roll‐to‐plate ROP of In2O3 semiconductor and evaporated Al source/drain (S/D) contacts show, on average, mobilities of 3.1 and 3.5 cm2 V−1 s−1, and ON/OFF‐ratios up to 108 and 107 on a Si/SiO2 substrate and on a flexible polyimide‐type substrate, respectively. TFTs on the flexible substrate with also the S/D‐contacts printed with ROP using Ag nanoparticle ink exhibit a 1.4 cm2 V−1 s−1 mobility. To demonstrate the scalability of the process, continuous lines of In2O3 are printed using a roll‐to‐roll‐compatible (R2R) ROP with linewidths down to ≈2 µm. This process is expected to lead to miniaturized metal‐oxide circuits as required by flexible high‐resolution sensor arrays and displays.

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Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

Cited by 23 publications

References 30 publications

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Roll‐to‐Roll Reverse‐Offset Printing Combined with Photonic Sintering Process for Highly Conductive Ultrafine Patterns

Reverse‐Offset Printing of Metal‐Nitrate‐Based Metal Oxide Semiconductor Ink for Flexible TFTs

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