Reverse-offset for roll-to-roll high-resolution printing

Sneck, Asko; Mäkelä, Tapio; Alastalo, Ari

doi:10.1088/2058-8585/aa9f00

Cited by 21 publications

(31 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The substrate is 125-µm thick PEN plastic ( r = 2.95, tan δ = 0.004). After sintering of the antenna, the square resistance of the metal layer is estimated to be 1-2 Ω/ [13]. In the measurements, the antenna under test is placed on the metal chuck of the probe station and it is fed with a 100µm pitch GSG-probe.…”

Section: Resultsmentioning

confidence: 99%

One-Antenna Gain Measurement in a Probe Station

Ala‐Laurinaho

Zheng

Räisänen

2018

2018 IEEE Conference on Antenna Measurements &Amp; Applications (CAMA)

View full text Add to dashboard Cite

This paper presents gain measurement results of a printed patch antenna in a probe station environment at millimeter wavelengths. The one-antenna gain measurement method relying on the use of a reflective plate and measurement of the reflection coefficient is applied. The accuracy of the measurement is improved by moving the reflective plate and thus changing its distance from the antenna. In addition, the time-gating is used in order to avoid the effect of the multiple reflections and other stray signals from nearby reflecting objects. The size requirement for the reflective plate is experimentally studied by using three different plate sizes. Also, different reflective plate distance ranges for the gain retrieval are investigated. The obtained results suggest that the distance range of 20-30 mm and reflective plate width of 30 mm are sufficient to provide accurate gain results for a patch antenna at W-band.

show abstract

Section: Resultsmentioning

confidence: 99%

One-Antenna Gain Measurement in a Probe Station

Ala‐Laurinaho

Zheng

Räisänen

2018

2018 IEEE Conference on Antenna Measurements &Amp; Applications (CAMA)

View full text Add to dashboard Cite

show abstract

“…The substrates were oxygen plasma treated before printing with 60 s/20 SCCM O 2 flow/200 W. The semidry condition of the ink was reached after drying the PDMS for 70 s at 60 °C after which the off‐step and set‐steps were immediately performed using 1 and 5 mm s −1 speed, respectively. R2R reverse‐offset printing tests of the In 2 O 3 ink were performed using a laboratory‐scale R2R ROP unit and a flexible electroplated nickel cliché . An IR heating lamp (150 W at 75 mm distance) was used to promote the formation of the semi‐dry ink condition (≈3–5 min).…”

Section: Methodsmentioning

confidence: 99%

“…In order to study the scaling of the ROP process of MO semiconductor ink toward smaller features, we employed a lab‐scale roll‐to‐roll‐compatible (R2R) ROP unit to print the In 2 O 3 ink on PI/Al 2 O 3 substrates. The R2R ROP method is described earlier for printing of high‐resolution patterns using Ag nanoparticle inks and features a patterned electroplated nickel cliché . The test pattern had lines with varied nominal widths ranging from 1 up to 32 µm (Figure S8, Supporting Information).…”

mentioning

confidence: 99%

Reverse‐Offset Printing of Metal‐Nitrate‐Based Metal Oxide Semiconductor Ink for Flexible TFTs

Leppäniemi

Sneck

Kusaka

et al. 2019

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

Reverse‐offset printing (ROP) is a novel printing technique capable of forming electronics‐industry‐relevant linewidths (≈1 µm) with good thickness control and sharp edge definition. It is demonstrated that through a controlled oxygen‐plasma treatment, the energy of the surfaces related to the process steps of ROP can be optimized to allow the patterning of metal‐oxide semiconductor layers using a simple printing ink based on metal nitrates dissolved in an organic solvent. The steps of the ROP process are analyzed using surface‐energy measurements and Fourier transform infrared spectra of the ink during drying. Thin‐film transistors (TFTs) fabricated using a roll‐to‐plate ROP of In2O3 semiconductor and evaporated Al source/drain (S/D) contacts show, on average, mobilities of 3.1 and 3.5 cm2 V−1 s−1, and ON/OFF‐ratios up to 108 and 107 on a Si/SiO2 substrate and on a flexible polyimide‐type substrate, respectively. TFTs on the flexible substrate with also the S/D‐contacts printed with ROP using Ag nanoparticle ink exhibit a 1.4 cm2 V−1 s−1 mobility. To demonstrate the scalability of the process, continuous lines of In2O3 are printed using a roll‐to‐roll‐compatible (R2R) ROP with linewidths down to ≈2 µm. This process is expected to lead to miniaturized metal‐oxide circuits as required by flexible high‐resolution sensor arrays and displays.

show abstract

“…Printing experiments revealed that up to 100 μm wide structures could be printed in the printing direction, but less than that in the transverse direction (Figure 2.3). One solution for this problem is to increase the depth of the relief on the stamp (2 μm depth was used in this work [30] typically lead to bigger Ag nanopaste grain size [37]. However, temperatures higher than 200°C may seriously damage PEN substrates.…”

Section: Supporting Pillars For Large Conductor Area Printingmentioning

confidence: 99%

“…1 illustrates the work flow and diagram of the R2R-RO printing process. There are three main process steps during RO printing: (i) ink application, (ii) ink removal by stamp and (iii) ink transfer to the substrate, as shown inFigure 2.1(a)[30]. At the first step, the conductive ink is applied with a coating device on the polydimethylsiloxane (PDMS) blanket.…”

mentioning

confidence: 99%