Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes

Кwon, Wook Hyun; Kawasaki, Seiya; Watanabe, Hirotaka; Tanaka, Atsushi; Honda, Yoshio; Ikeda, Hirofumi; Iso, Kenji; Amano, Hiroshi

doi:10.1109/led.2023.3274306

Cited by 8 publications

(4 citation statements)

References 24 publications

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“…Finally, in Region C, the increasing electric field reduces the hopping distance from the metal to trap states, which allows the electrons to hop easily from the Schottky metal to the conduction band of the GaN drift layer, which is referred to as variable range hopping (VRH). These leakage mechanisms are in agreement with previously reported studies for GaN devices [33][34][35].…”

Section: Discussionsupporting

confidence: 93%

Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

El Amrani,

Buckley,

Kaltsounis

et al. 2024

Crystals

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In this work, a GaN-on-Si quasi-vertical Schottky diode was demonstrated on a locally grown n-GaN drift layer using Selective Area Growth (SAG). The diode achieved a current density of 2.5 kA/cm2, a specific on-resistance RON,sp of 1.9 mΩ cm2 despite the current crowding effect in quasi-vertical structures, and an on/off current ratio (Ion/Ioff) of 1010. Temperature-dependent current–voltage characteristics were measured in the range of 313–433 K to investigate the mechanisms of leakage conduction in the device. At near-zero bias, thermionic emission (TE) was found to dominate. By increasing up to 10 V, electrons gained enough energy to excite into trap states, leading to the dominance of Frenkel–Poole emission (FPE). For a higher voltage range (−10 V to −40 V), the increased electric field facilitated the hopping of electrons along the continuum threading dislocations in the “bulk” GaN layers, and thus, variable range hopping became the main mechanism for the whole temperature range. This work provides an in-depth insight into the leakage conduction transport on pseudo-vertical GaN-on-Si Schottky barrier diodes (SBDs) grown by localized epitaxy.

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Section: Discussionsupporting

confidence: 93%

Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

El Amrani,

Buckley,

Kaltsounis

et al. 2024

Crystals

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show abstract

“…Finally, at region C, the increasing electric field reduces the hopping distance from the metal to trap states, which allows the electrons to hop easily from the Schottky metal to the conduction band of GaN drift layer, which is referred to Variable Range Hopping (VRH). These leakage mechanisms are in agreement with previously reported studies for GaN devices [34][35][36].…”

Section: Thermionic Emissionsupporting

confidence: 93%

Study of the Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

EL AMRANI,

Buckley,

Kaltsounis

et al. 2024

Preprint

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In this work, a GaN-on-Si quasi-vertical Schottky diode was demonstrated on a locally grown n-GaN drift layer. The diode achieves a high current density of 2.5 kA/cm², a specific on-resistance RON,sp of 1.9 mΩ.cm² despite the crowding effect in quasi-vertical device and on/off current ratio (Ion/Ioff) of 1010. Temperature-dependent current-voltage characteristics have been measured in the range of 300-433 K to investigate the mechanisms of leakage conduction in the device. At near zero bias, thermionic emission (TE) was found to dominate. At voltage range from -1 to -10 V, electrons gain enough energy to excite into trap states, leading to the dominance of Frenkel-Poole emission (FPE). For a higher voltage range (-10V to -40V), the increased electric field promotes electron hopping along the threading dislocations in the “bulk” GaN layers, and thus, Variable Range Hopping becomes the main mechanism for the whole temperature range. This work provides an in-depth insight into the leakage conduction mechanisms on vertical GaN-on-Si Schottky barrier Diodes (SBDs) grown by localized epitaxy.

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“…In fact, deep levels are responsible for several physical phenomena, including carrier trapping, which leads to parametric instability [1][2][3][4][5] and degradation of the dynamic performance [6][7][8][9]; they can act as recombination centers [10,11], thus contributing to a decrease in the internal quantum efficiency of light emitters [12][13][14][15], a decrease in the carrier lifetime [16], and limited spectral purity of optoelectronic devices [17][18][19][20]. In addition, trap states can assist tunneling processes, which have detrimental effects on the reliability of several devices, including high electron mobility transistors (HEMTs) [21][22][23] and light-emitting diodes (LEDs) [24][25][26][27], and promote leakage current [22,28].…”

Section: Introductionmentioning

confidence: 99%

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Fregolent,

Piva,

Buffolo

et al. 2024

J. Phys. D: Appl. Phys.

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The study of deep level defects in semiconductors has always played a strategic role for the development of electronic and optoelectronic devices. In fact, deep levels have a strong impact on many of the device properties, including the efficiency, stability, and reliability because they can drive several physical process. Despite the advancements in crystal growth, wide and ultrawide bandgap semiconductors (such as gallium nitride and gallium oxide) are still strongly affected by the formation of defects that in general can act as carrier traps or generation-recombination centers. Conventional techniques used for deep level analysis in silicon need to be adapted for identifying and characterizing defects in wide bandap materials. This topical review paper presents an overview of reviews the theory of deep levels in semiconductor; in addition, we present a review and original results and on the application, limits and perspectives of two widely adopted most common deep -levels detection techniques, namely capacitance deep level transient spectroscopy and deep level optical spectroscopy, with specific focus on wide bandgap semiconductors. Finally, the most common traps of GaN and β-Ga2O3 are reviewed.

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Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes

Cited by 8 publications

References 24 publications

Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

Study of the Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

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