Reverse currents of Schottky gates of III–V MESFET/HEMTs: field emission and tunnel currents

Takamiya, S.; Harayama, Masaya; Sugimura, Tomoyuki; Tsuzuku, Tatsutoshi; Taya, Takanobu; Iiyama, Koichi; Hashimoto, Shoushin

doi:10.1016/s0038-1101(97)00264-5

Cited by 14 publications

(5 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Additionally, the thermionic-field emission and tunnelling mechanisms manifest the increase of leakage currents, since the carriers, acquiring sufficient energy, became 'hot' to dominate over the scattering effects and the Schottky barrier also decreased at high temperatures to facilitate the current injection or tunnelling. Therefore, the breakdown voltage is observed to decrease with temperature above 400 K [12]. The proposed device has also demonstrated higher turn-on and breakdown characteristics up to 500 K, as compared to the previous reports [8,9].…”

Section: Resultssupporting

confidence: 54%

Improved high-temperature characteristics of a symmetrically graded AlGaAs/In_xGa_1−xAs/AlGaAs pHEMT

Huang

Hsu

Lee

et al. 2006

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This work investigates the superior high-temperature and high-linearity characteristics of a double δ-doped AlGaAs/In x Ga 1−x As/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) with a symmetrically linearly graded In x Ga 1−x As channel and a wide energy gap AlGaAs barrier. Distinguished high-temperature device characteristics are presented, including an extrinsic transconductance (g m,max ) of 182 (223) mS mm −1 , a drain-source saturation current density (I DSS ) of 428 (524) mA mm −1 , an output conductance of 0.334 (0.352) mS mm −1 , a gate-voltage swing (GVS) of 1.45 (1.5) V, a voltage gain (A v ) of 505 (658) and a reverse breakdown voltage (BV GD ) of −24.1 (−31.2) V at 500 (300) K, respectively, with gate dimensions of 0.65 × 200 µm 2 . In addition, the device demonstrates a superior stable thermal threshold coefficient (∂V th /∂T ) of −0.55 mV K −1 , a thermal GVS coefficient (∂GVS/∂T ) of −0.25 mV K −1 and a wide gate-bias range of 1.25 V for a unity-gain cut-off frequency (f t ) of over 20 GHz. Consequently, the proposed device shows good potential for high-temperature and high-linearity circuit applications.

show abstract

Section: Resultssupporting

confidence: 54%

Improved high-temperature characteristics of a symmetrically graded AlGaAs/In_xGa_1−xAs/AlGaAs pHEMT

Huang

Hsu

Lee

et al. 2006

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…7 plots the electric field profile at the gate interface, as the peak electric field at the gate edges is responsible for OFF-state breakdown. For a given Schottky barrier height and temperature, the OFF-state breakdown is dominated by TL electrons at high electric fields (> 900 kV/cm) and thermionic emission for low fields (< 150 kV/cm) [24]- [26]. As the peak electric field at the gate-drain edge (gate interface) is normally around 900 kV/cm, it is therefore under the high probability of breakdown.…”

Section: Resultsmentioning

confidence: 99%

Gate-Geometric Recessed Nanoscale <formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As}$</tex></formula>–<formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$</tex></formula> Double-Gate HEMT for High Breakdown

Rathi

Gupta

2012

IEEE Trans. Device Mater. Relib.

View full text Add to dashboard Cite

In this paper, a generalized analysis of recessed double-gate high-electron-mobility transistor for different gate geometries (T-gate, IL-gate, Γ-gate, etc.) to realize higher breakdown is carried out. The effect of gate geometries on breakdown voltage is studied through potential and electric field profile. The drain current, transconductance, intrinsic gain, capacitances, and RF performances are also studied. The analysis shows that the incorporation of these geometries not only leads to higher breakdown but also enhances the transcapacitance of the devices, which affect the device RF performance.

show abstract

“…BV gd is found to have increased from 12 to 19 V when we increased L gn+ from 0.3 to 0.5 μm. It is reported that the reverse bias breakdown mechanism in a pHEMT is based on the gate leakage current caused by the following possible mechanisms: impact ionization, TFE and tunnelling [5][6][7][8][9][10][11]. Here, BV gd is a strong function of peak electric field at gate edge towards drain.…”

Section: Resultsmentioning

confidence: 99%

“…Most of the studies interpreted the Schottky breakdown mechanism by the thermionic field emission (TFE) [5,6], tunnelling [5,[7][8][9], or impact ionization [9][10][11], in which BV gd is a strong function of peak electric field at the gate edge towards drain. Hence, the tailoring of peak electric field 0268-1242/12/115013+07$33.00 at the gate edge to lower values has been shown to be essential to improve BV gd [12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Gate recess structure engineering using silicon-nitride-assisted process for increased breakdown voltage in pseudomorphic HEMTs

Bhat¹,

Mandal²,

Pathak³

et al. 2012

Semicond. Sci. Technol.

View full text Add to dashboard Cite

We report the fabrication of pseudomorphic high electron mobility transistors (pHEMTs) with engineered recess structure of any width of choice, by a single lithography and etching step with the help of silicon-nitride-assisted process. In this process, a silicon nitride layer is deposited prior to gate lithography. First, the silicon nitride is etched by buffered hydrofluoric acid (BHF) in the gate opening and then selective recessing is performed. The recess base width can be engineered by varying etch time of silicon nitride in BHF. The base width increases linearly with etch time as shown by SEM. We demonstrate that the top photoresist gate opening that decides the gate length is unaffected by any duration of silicon nitride etch time. Thereby, we have engineered the distance from gate edge to n + -GaAs (L gn+ ) which decides the gate-to-drain breakdown voltage (BV gd ). With this method, BV gd increased from 12 to 20 V as a function of L gn+ . The electric field distribution across the recess structure has been simulated to interpret this result. Since the high BV gd of pHEMT is essential for power applications as well as switch applications, this method can be easily adopted even though the corresponding reduction in transconductance and unit current gain cut-off frequency (f t ) is only marginal from 375 to 350 mS mm −1 and from 39 to 31 GHz, respectively.

show abstract

Reverse currents of Schottky gates of III–V MESFET/HEMTs: field emission and tunnel currents

Cited by 14 publications

References 2 publications

Improved high-temperature characteristics of a symmetrically graded AlGaAs/In_xGa_1−xAs/AlGaAs pHEMT

Improved high-temperature characteristics of a symmetrically graded AlGaAs/In_xGa_1−xAs/AlGaAs pHEMT

Gate-Geometric Recessed Nanoscale <formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As}$</tex></formula>–<formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$</tex></formula> Double-Gate HEMT for High Breakdown

Gate recess structure engineering using silicon-nitride-assisted process for increased breakdown voltage in pseudomorphic HEMTs

Contact Info

Product

Resources

About

Reverse currents of Schottky gates of III–V MESFET/HEMTs: field emission and tunnel currents

Cited by 14 publications

References 2 publications

Improved high-temperature characteristics of a symmetrically graded AlGaAs/InxGa1−xAs/AlGaAs pHEMT

Improved high-temperature characteristics of a symmetrically graded AlGaAs/InxGa1−xAs/AlGaAs pHEMT

Gate-Geometric Recessed Nanoscale <formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As}$</tex></formula>&#x2013;<formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$</tex></formula> Double-Gate HEMT for High Breakdown

Gate recess structure engineering using silicon-nitride-assisted process for increased breakdown voltage in pseudomorphic HEMTs

Contact Info

Product

Resources

About

Improved high-temperature characteristics of a symmetrically graded AlGaAs/In_xGa_1−xAs/AlGaAs pHEMT

Improved high-temperature characteristics of a symmetrically graded AlGaAs/In_xGa_1−xAs/AlGaAs pHEMT

Gate-Geometric Recessed Nanoscale <formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As}$</tex></formula>–<formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$</tex></formula> Double-Gate HEMT for High Breakdown