Reverse blocking IGCT optimised for 1 kV DC bi‐directional solid state circuit breaker

Vemulapati, Umamaheswara; Arnold, Martin; Rahimo, Munaf; Antoniazzi, Antonello; Pessina, Davide

doi:10.1049/iet-pel.2015.0028

Cited by 42 publications

(9 citation statements)

References 10 publications

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“…The commonly used devices in SSCBs are Silicon (Si)-based power devices [9,11,12,13,14]. However, the performance of traditional Si devices has reached its limitation [15].…”

Section: Introductionmentioning

confidence: 99%

Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET

Zhong

et al. 2019

Micromachines

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Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (DC) solid state circuit breaker (SSCB). To guarantee fast and reliable action of a 400 V DC SSCB with SiC MOSFET, circuit design and prototype development were carried out. Taking 400V DC microgrid as research background, firstly, the topology of DC SSCB with SiC MOSFET was introduced. Then, the drive circuit of SiC MOSFET, fault detection circuit, energy absorption circuit, and snubber circuit of the SSCB were designed and analyzed. Lastly, a prototype of the DC SSCB with SiC MOSFET was developed, tested, and compared with the SSCB with Silicon (Si) insulated gate bipolar transistor (IGBT). Experimental results show that the designed circuits of SSCB with SiC MOSFET are valid. Also, the developed miniature DC SSCB with the SiC MOSFET exhibits faster reaction to the fault and can reduce short circuit time and fault current in contrast with the SSCB with Si IGBT. Hence, the proposed SSCB can better meet the requirements of DC microgrid protection.

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“…The commonly used devices in SSCBs are Silicon (Si)-based power devices [9,11,12,13,14]. However, the performance of traditional Si devices has reached its limitation [15].…”

Section: Introductionmentioning

confidence: 99%

Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET

Zhong

et al. 2019

Micromachines

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“…In recent years, multilevel inverters have been widely used in the high‐power and high‐voltage equipment for steel rolling, railway traction, new energy generation and energy storage access, ships, large‐scale oil and gas transmission, wind tunnel drive system, and so on . The five‐level NPC/H topology is mostly used for 6.6 kV inverters between 10 and 40 MW with high‐power integrated gate‐commutated thyristor (IGCTs . Due to the switching losses and thermal conditions, the switching frequency of the high‐power inverter is limited.…”

Section: Introductionmentioning

confidence: 99%

A novel space vector modulation algorithm with narrow pulse suppression and high‐voltage jump suppression for high‐power five‐level NPC/H inverter

Liu

Wang

Liu

2019

IEEJ Transactions Elec Engng

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In the high-power five-level neutral point clamping/H-bridge (NPC/H) inverter, the traditional space vector modulation (SVM) algorithm at a low switching frequency has the disadvantages of a high-voltage jump at high modulation index and an inherent narrow pulse at low modulation index, which may cause serious damage to the power stage. In this paper, a novel SVM algorithm is proposed to suppress the high-voltage jump and narrow pulse for the five-level NPC/H inverter with a high-power integrated gate-commutated thyristor (IGCT). An equivalent three-level NPC model is applied to reduce the redundant switching state. To suppress the high-voltage jump at high modulation index, the switching state optimization method is proposed. Moreover, the zero sequence voltage injection is proposed to suppress the narrow pulse at low modulation index. Finally, the novel SVM algorithm is experimentally tested on an experimental prototype and an engineering prototype for 6.6 kV to 20 MW motor drive system. The simulation and experimental results verify the effectiveness of the proposed SVM algorithm.He Liu (Non-member) He received an M.S. degree in power electronics and power drives from the school of Information and Electrical Engineering, China University of Mining and Technology in 2012 and is presently working toward a Ph.D. inform the School of electronic information and electrical engineering, Shanghai Jiao Tong University. He has worked on multilevel converters.

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“…In modern electric power systems, fast switching times are commonly achieved through the solid-state switches (SSS) consisting of semiconductor valves. In applications which demand interrupting significant currents, power transistors (metal-oxide semiconductor field-effect transistors (MOSFETs), insulated gate bipolar transistors (IGBTs)) or force commutated devices (gate turn-off thyristors (GTOs), integrated gate-commutated thyristor (IGCT)) are widely used [1][2][3]. Hazardous overvoltage peaks may occur due to the relatively fast current interruption, even in a circuit with very small inductance.…”

Section: Introductionmentioning

confidence: 99%